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Philosophical Magazine A Volume 67, 1993 - Issue 4
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Original Articles

The interaction of oxygen with dislocation cores in silicon

A. Umerski Department of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, England
&
R. Jones Department of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, England
Pages 905-915 | Received 13 Aug 1992, Accepted 24 Sep 1992, Published online: 13 Sep 2006

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S. Senkader, K. Jurkschat, D. Gambaro, R.J. Falster & P.R. Wilshaw. (2001) On the locking of dislocations by oxygen in silicon. Philosophical Magazine A 81:3, pages 759-775.
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Articles from other publishers (33)

Kei Hayashi, Sota Kawamura, Yusuke Hashimoto, Noboru Akao, Zhicheng Huang, Wataru Saito, Kaichi Tasaki, Koichi Hayashi, Tomohiro Matsushita & Yuzuru Miyazaki. (2023) Effects of Oxygen on Lattice Defects in Single-Crystalline Mg2Si Thermoelectrics. Nanomaterials 13:7, pages 1222.
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Sergio Pizzini. 2015. Physical Chemistry of Semiconductor Materials and Processes. Physical Chemistry of Semiconductor Materials and Processes 195 264 .
Helmut Alexander & Helmar Teichler. 2006. Materials Science and Technology. Materials Science and Technology.
F. Sahtout Karoui & A. Karoui. (2010) A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon. Journal of Applied Physics 108:3, pages 033513.
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Maria Ganchenkova & Risto M. Nieminen. 2010. Handbook of Silicon Based MEMS Materials and Technologies. Handbook of Silicon Based MEMS Materials and Technologies 179 219 .
I. Yonenaga & K. Takahashi. (2007) Effect of magnetic field on dislocation-oxygen impurity interaction in silicon. Journal of Applied Physics 101:5.
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John C.H. Spence. 2007. 419 452 .
M. Badylevich, Vitaly V. Kveder, Valeri I. Orlov & Yu. Osipyan. (2005) Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time. Solid State Phenomena 108-109, pages 163-168.
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F. Sahtout Karoui, A. Karoui, N. Inoue & G. A. Rozgonyi. (2011) Vibrational Spectra of Nitrogen-Oxygen Defects in Nitrogen Doped Silicon using Density Functional Theory. MRS Proceedings 810.
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Peter PichlerPeter Pichler. 2004. Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon. Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon 469 512 .
F. Sahtout Karoui, A. Karoui, George A. Rozgonyi, M. HouraiKoji Sueoka. (2003) Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics. Solid State Phenomena 95-96, pages 99-104.
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M. Badylevich, Yu.L. Iunin, Vitaly V. Kveder, Valeri I. Orlov & Yu. Osipyan. (2003) Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon. Solid State Phenomena 95-96, pages 433-438.
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M. V. Badylevich, Yu. L. Iunin, V. V. Kveder, V. I. Orlov & Yu. A. Osip’yan. (2003) Effect of a magnetic field on the starting stress and mobility of individual dislocations in silicon. Journal of Experimental and Theoretical Physics 97:3, pages 601-605.
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J.-L. Farvacque, Z. Bougrioua & I. Moerman. (2001) Free-carrier mobility in GaN in the presence of dislocation walls. Physical Review B 63:11.
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J.-L. Farvacque & P. Fran�ois. (2001) Numerical Determination of Shallow Electronic States Bound by Dislocations in Semiconductors. physica status solidi (b) 223:3, pages 635-648.
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S. Pizzini, M. Acciarri, E. Leoni & A. Le Donne. (2000) About the D1 and D2 Dislocation Luminescence and Its Correlation with Oxygen Segregation. physica status solidi (b) 222:1, pages 141-150.
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Helmut Alexander & Helmar Teichler. 2000. Handbook of Semiconductor Technology Set. Handbook of Semiconductor Technology Set 291 376 .
Helmut Alexander & Helmar Teichler. 2000. Handbook of Semiconductor Technology. Handbook of Semiconductor Technology 291 376 .
R. Jones. (2000) Do we really understand dislocations in semiconductors?. Materials Science and Engineering: B 71:1-3, pages 24-29.
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J.L Farvacque & Ph François. (1999) Numerical determination of one-dimensional energy bands bound to dislocations. Physica B: Condensed Matter 273-274, pages 995-998.
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H. Alexander, H. R. Kolar & J. C. H. Spence. (1999) Kinks on Partials of 60° Dislocations in Silicon as Revealed by a Novel TEM Technique. physica status solidi (a) 171:1, pages 5-16.
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Niklas Lehto & Sven Öberg. (1998) Effects of Dislocation Interactions: Application to the Period-Doubled Core of the 90° Partial in Silicon. Physical Review Letters 80:25, pages 5568-5571.
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Xian‐Jie Ning, Nicolas Huvey & Pirouz Pirouz. (2005) Dislocation Cores and Hardness Polarity of 4H‐SiC. Journal of the American Ceramic Society 80:7, pages 1645-1652.
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H. R. Kolar, J. C. H. Spence & H. Alexander. (1996) Observation of Moving Dislocation Kinks and Unpinning. Physical Review Letters 77:19, pages 4031-4034.
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F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro & P. Deák. 1996. C,H,N and O in Si and Characterization and Simulation of Materials and Processes. C,H,N and O in Si and Characterization and Simulation of Materials and Processes 91 95 .
F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro & P. Deák. (1996) The nitrogen-pair oxygen defect in silicon. Materials Science and Engineering: B 36:1-3, pages 91-95.
Crossref
F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro & P. Deák. 1996. Early Stages of Oxygen Precipitation in Silicon. Early Stages of Oxygen Precipitation in Silicon 319 327 .
P. K. Sitch, R. Jones, S. Öberg & M. I. Heggie. (1995) Ab initio investigation of the dislocation structure and activation energy for dislocation motion in silicon carbide . Physical Review B 52:7, pages 4951-4955.
Crossref
S. Öberg, P. K. Sitch, R. Jones & M. I. Heggie. (1995) First-principles calculations of the energy barrier to dislocation motion in Si and GaAs. Physical Review B 51:19, pages 13138-13145.
Crossref
R Jones, C Ewels, J Goss, J Miro, P Deak, S Oberg & F B Rasmussen. (1994) Theoretical and isotopic infrared absorption investigations of nitrogen-oxygen defects in silicon. Semiconductor Science and Technology 9:11, pages 2145-2148.
Crossref
R.C. Newman & R. Jones. 1994. 289 352 .
M. I. Heggie, R. Jones & A. Umerski. (1993) Ab initio total energy calculations of impurity pinning in silicon. Physica Status Solidi (a) 138:2, pages 383-387.
Crossref
R. Jones, A. Umerski, P. Sitch, M. I. Heggie & S. Öberg. (1993) Density functional calculations of the structure and properties of impurities and dislocations in semiconductors. Physica Status Solidi (a) 138:2, pages 369-381.
Crossref

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