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Philosophical Magazine A Volume 69, 1994 - Issue 5
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Original Articles

Cross-slip in the first stages of plastic relaxation in InxGa1−xAs/GaAs heterostructures

C. Ulhaq-bouillet Laboratoire de Structure et Propriétés de l'Etat Solide (Unité de Recherche associée au CNRS 234), Université des Sciences et Technologies de Lille, B[acaron]timent C6, 59655, Villeneuve d'Ascq Cedex, France
,
A. Lefebvre Laboratoire de Structure et Propriétés de l'Etat Solide (Unité de Recherche associée au CNRS 234), Université des Sciences et Technologies de Lille, B[acaron]timent C6, 59655, Villeneuve d'Ascq Cedex, France
&
J. Di Persio Laboratoire de Structure et Propriétés de l'Etat Solide (Unité de Recherche associée au CNRS 234), Université des Sciences et Technologies de Lille, B[acaron]timent C6, 59655, Villeneuve d'Ascq Cedex, France
Pages 995-1015 | Received 30 Sep 1993, Accepted 25 Nov 1993, Published online: 27 Sep 2006

Citations (14)

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M. Putero, N. Burle & B. Pichaud. (2001) Misfit dislocation cross-slip at the first stages of plastic relaxation in low-mismatch heterostructures. Philosophical Magazine A 81:1, pages 125-136.
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A. Lefebvre & C. Ulhaq-bouillet. (1994) Multiplication of misfit dislocations in InxGa1−xAs/GaAs heterostructures. Philosophical Magazine A 70:6, pages 999-1012.
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Articles from other publishers (12)

E Spiecker, J Schöne, S Rajagopalan & W Jäger. 2005. Microscopy of Semiconducting Materials. Microscopy of Semiconducting Materials 117 130 .
B Pichaud, N Burle, M Putero-Vuaroqueaux & C Curtil. (2002) Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films. Journal of Physics: Condensed Matter 14:48, pages 13255-13267.
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G. Salviati, C. Ferrari, L. Lazzarini, L. Nasi, A.V. Drigo, M. Berti, D. De Salvador, M. Natali & M. Mazzer. (2002) Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress. Applied Surface Science 188:1-2, pages 36-48.
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M. Natali, F. Romanato, E. Napolitani, D. De Salvador & A. V. Drigo. (2000) Lattice curvature generation in graded buffer layers . Physical Review B 62:16, pages 11054-11062.
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F. Romanato, E. Napolitani, A. Carnera, A. V. Drigo, L. Lazzarini, G. Salviati, C. Ferrari, A. Bosacchi & S. Franchi. (1999) Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers. Journal of Applied Physics 86:9, pages 4748-4755.
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T. Marschner, M.R. Leys, H. Vonk & J.H. Wolter. (1998) XRD investigation of the relaxation of InAsP layers grown by CBE on (100) InP. Physica E: Low-dimensional Systems and Nanostructures 2:1-4, pages 873-877.
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G. Lacey, C.R. Whitehouse, P.J. Parbrook, A.G. Cullis, A.M. Keir, P. Möck, A.D. Johnson, G.W. Smith, G.F. Clark, B.K. Tanner, T. Martin, B. Lunn, J.H.C. Hogg, M.T. Emeny, B. Murphy & S. Bennett. (1998) In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system. Applied Surface Science 123-124, pages 718-724.
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F. Cléton, B. Sieber, A. Lefebvre, A. Bensaada, R. A. Masut, J. M. Bonard, J. D. Ganière & M. Ambri. (1996) Transmission electron microscopy and cathodoluminescence of tensile-strained Ga x In1− x P/InP heterostructures. I. Spatial variations of the tensile stress relaxation . Journal of Applied Physics 80:2, pages 827-836.
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Z. Bougrioua, J. L. Farvacque & D. Ferré. (1996) Effects of dislocations on transport properties of two dimensional electron gas. II. The quantum regime. Journal of Applied Physics 79:3, pages 1546-1555.
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Z. Bougrioua, J. L. Farvacque & D. Ferré. (1996) Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field. Journal of Applied Physics 79:3, pages 1536-1545.
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K. Shintani & H. Yonezawa. (1995) Comparative study of critical thicknesses of strained epitaxial layers based on the zero-energy criterion of dislocation half-loops. Journal of Applied Physics 78:8, pages 5022-5027.
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M. Kittler, C. Ulhaq-Bouillet & V. Higgs. (1995) Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level. Journal of Applied Physics 78:7, pages 4573-4583.
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