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Philosophical Magazine A Volume 70, 1994 - Issue 6
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Original Articles

Effects of elastic relaxation on large-angle convergent-beam electron diffraction from cross-sectional specimens of GexSi1−x/Si strained-layer superlattices

X. F. Duan Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, P.O. Box 2724, 100080, Beijing, PR China; H. H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, England
,
D. Cherns H. H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, England
&
J. W. Steeds H. H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, England
Pages 1091-1105 | Received 14 Jun 1994, Accepted 20 Jun 1994, Published online: 27 Sep 2006

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H.J. Maier, R.R. Keller, H. Renner, H. Mughrabi & A. Preston. (1996) On the unique evaluation of local lattice parameters by convergent-beam electron diffraction. Philosophical Magazine A 74:1, pages 23-43.
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Articles from other publishers (24)

Heiko Groiss. (2019) Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction. Crystals 10:1, pages 5.
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Zhifeng Wang, Yuan Yao, Xiaoqing He, Yang Yang, Lin Gu, Yanguo Wang & Xiaofeng Duan. (2012) Investigation of Strain and Thin Film Relaxation in Ge<i><sub>x</sub></i>Si<sub>1&minus;</sub><i><sub>x</sub></i>/Si Strained-Layer Superlattice by Dark-Field Electron Holography. MATERIALS TRANSACTIONS 53:11, pages 2019-2022.
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H.H. Liu, X.F. Duan & Q.X. Xu. (2009) Finite-element study of strain field in strained-Si MOSFET. Micron 40:2, pages 274-278.
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H.H. Liu, X.F. Duan, Qiuxia Xu & Bang-Gui Liu. (2008) Study of strained-silicon channel metal–oxide–semiconductor field effect transistors by large angle convergent-beam electron diffraction. Ultramicroscopy 108:9, pages 816-820.
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F. Houdellier, D. Jacob, M.J. Casanove & C. Roucau. (2008) Effect of sample bending on diffracted intensities observed in CBED patterns of plan view strained samples. Ultramicroscopy 108:4, pages 295-301.
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Qiuxia Xu, Xiaofeng Duan, Haihua Liu, Zhengsheng Han & Tianchun Ye. (2007) Low-Cost and Highly Manufacturable Strained-Si Channel Technique for Strong Hole Mobility Enhancement on 35-nm Gate Length pMOSFETs. IEEE Transactions on Electron Devices 54:6, pages 1394-1401.
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F. Houdellier, C. Roucau, L. Clément, J.L. Rouvière & M.J. Casanove. (2006) Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers. Ultramicroscopy 106:10, pages 951-959.
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H. H. Liu, X. F. Duan, X. Y. Qi, Q. X. Xu, H. O. Li & H. Qian. (2006) Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction. Applied Physics Letters 88:26.
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J. P. Morniroli, P. H. Albarède & D. Jacob. 2005. Materials for Information Technology. Materials for Information Technology 99 108 .
P.R. Berndt, J.H. Neethling, C.B. Franklyn & H.W. Zandbergen. (2004) A TEM investigation of the lattice defects and exfoliation in hydrogen-implanted CdTe. Materials Science and Engineering: B 113:3, pages 253-258.
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X.Y. Qi, H. Yang, X. Kong, G.Q. Hu, X.F. Duan & B.R. Zhao. (2004) Transmission electron microscopy of Ba0.7Sr0.3TiO3/YBa2Cu3O7−δ epitaxial films on (001) SrTiO3 substrates. Journal of Crystal Growth 262:1-4, pages 353-358.
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Stefano Frabboni. (2002) Lattice strain and static disorder in hydrogen-implanted and annealed single-crystal silicon as determined by large-angle convergent-beam electron diffraction. Physical Review B 65:16.
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F Pailloux & R.J Gaboriaud. (2000) Stress relaxation in c ⊥ – c // YBaCuO thin films on MgO substrate studied by LACBED. Thin Solid Films 368:1, pages 142-146.
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F Gambetta, S Frabboni, R Tonini & F Corni. (2000) Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon. Materials Science and Engineering: B 71:1-3, pages 87-91.
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Feng Wu, Aldo Armigliato, Roberto Balboni & Stefano Frabboni. (1999) Investigation of strain distribution in LOCOS structures by dynamical simulation of LACBED patterns. Ultramicroscopy 80:3, pages 193-201.
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C.R Chen, Y Liu & S.X Li. (1999) Characteristics of the stress relaxation in the thinned two-phase multilayer materials. Materials Science and Engineering: A 265:1-2, pages 146-152.
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Huamin Zou, Jun Liu, Di-hua Ding, Renhui Wang, L. Froyen & L. Delaey. (1998) Determination of interfacial residual stress field in an Al–Al2O3 composite using convergent-beam electron diffraction technique. Ultramicroscopy 72:1-2, pages 1-15.
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Jing Zhu, X.F. Duan, D.X. Li & H.Q. Ye. (1998) Applications of microdiffraction related to HREM. Microscopy Research and Technique 40:2, pages 122-135.
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J. Vanhellemont, K. G. F. Janssens, S. Frabboni, P. Smeys, R. Balboni & A. Armigliato. (2011) Transmission Electron Diffraction Techniques for NM Scale Strain Measurement in Semiconductors. MRS Proceedings 406.
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J. Vanhellemont, K. G. F. Janssens, S. Frabboni, P. Smeys, R. Balboni & A. Armigliato. (2011) Transmission Electron Diffraction Techniques for Nm Scale Strain Measurement in Semiconductors. MRS Proceedings 405.
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