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Philosophical Magazine A Volume 71, 1995 - Issue 4
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Original Articles

On the generation of a cross grid of extended screw-type misfit dislocations on the ZnSxSe1-x/GaAs interface

L. H. Kuo Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD, 20742-2115, USA
,
L. Salamanca-riba Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD, 20742-2115, USA
,
G. Hofler 3M Company, St. Paul, MN, 55144-1000, USA
&
B. J. Wu 3M Company, St. Paul, MN, 55144-1000, USA
Pages 883-899 | Received 16 May 1994, Accepted 30 Sep 1994, Published online: 13 Sep 2006

Citations (5)

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Read on this site (1)

D. Cherns, S. Mylonas, D.E. Ashenford & B. Lunn. (1996) A new source of misfit dislocations in ZnTe/GaSb(001). Philosophical Magazine A 74:2, pages 553-568.
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Articles from other publishers (4)

S Lavagne, C Levade, G Vanderschaeve, J Crestou, E Tournié & J P Faurie. (2000) Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers. Journal of Physics: Condensed Matter 12:49, pages 10287-10293.
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L. H. Kuo, K. Kimura, A. Ohtake, S. Miwa, T. Yasuda & T. Yao. (1997) Nature and origins of stacking faults from a ZnSe/GaAs interface. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 15:4, pages 1241-1253.
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Marcus J. Kastner, Gabriella Leo, Doris Brunhuber, Andreas Rosenauer, Herbert Preis, Berthold Hahn, Markus Deufel & Wolfgang Gebhardt. (1997) Investigations on strain relaxation of ZnSxSe1−x layers grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth 172:1-2, pages 64-74.
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L. H. Kuo, K. Kimura, S. Miwa, T. Yasuda & T. Yao. (1997) Role of interface chemistry and growing surface stoichiometry on the generation of stacking faults in ZnSe/GaAs. Journal of Electronic Materials 26:2, pages 53-63.
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