Advanced search
Publication Cover
Philosophical Magazine A Volume 71, 1995 - Issue 5
Journal homepage
30
Views
8
CrossRef citations to date
0
Altmetric
Original Articles

Interface defect structure of metal-organic chemically vapour-deposited InP and GaAs on Si(111)

H. Cerva Siemens AG, Research Laboratories, Otto Hahn Ring 6, D-81730, München, Germany
,
A. Krost Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraβe 36, D-10623, Berlin, Germany
,
R. F. Schnabel Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraβe 36, D-10623, Berlin, Germany
&
D. Bimberg Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraβe 36, D-10623, Berlin, Germany
Pages 1145-1159 | Received 09 May 1994, Accepted 21 Oct 1994, Published online: 13 Sep 2006

Citations (8)

Keep up to date with the latest research on this topic with citation updates for this article.

Subscribe to citation updates

Read on this site (1)

Viktor S. Kopp & Vladimir M. Kaganer. (2014) X-ray diffraction from hexagonal dislocation networks. Philosophical Magazine 94:28, pages 3247-3258.
Read now

Articles from other publishers (7)

Oliver Supplie, Oleksandr Romanyuk, Christian Koppka, Matthias Steidl, Andreas Nägelein, Agnieszka Paszuk, Lars Winterfeld, Anja Dobrich, Peter Kleinschmidt, Erich Runge & Thomas Hannappel. (2018) Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory. Progress in Crystal Growth and Characterization of Materials 64:4, pages 103-132.
Crossref
W. Guo, L. Date, V. Pena, X. Bao, C. Merckling, N. Waldron, N. Collaert, M. Caymax, E. Sanchez, E. Vancoille, K. Barla, A. Thean, P. Eyben & W. Vandervorst. (2014) Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001). Applied Physics Letters 105:6.
Crossref
H A Fonseka, H H Tan, J Wong-Leung, J H Kang, P Parkinson & C Jagadish. (2013) High vertical yield InP nanowire growth on Si(111) using a thin buffer layer. Nanotechnology 24:46, pages 465602.
Crossref
Andre Proessdorf, Frank Grosse, Oleksandr Romanyuk, Wolfgang Braun, Bernd Jenichen, Achim Trampert & Henning Riechert. (2011) Interface engineering for improved growth of GaSb on Si(111). Journal of Crystal Growth 323:1, pages 401-404.
Crossref
William M. Vetter & Michael Dudley. (2004) Characterization of defects in 3C-silicon carbide crystals. Journal of Crystal Growth 260:1-2, pages 201-208.
Crossref
David J Smith. (1997) The realization of atomic resolution with the electron microscope. Reports on Progress in Physics 60:12, pages 1513-1580.
Crossref
F. Ernst. (1997) Interface dislocations forming during epitaxial growth of GeSi on (111) Si substrates at high temperatures. Materials Science and Engineering: A 233:1-2, pages 126-138.
Crossref

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.