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Philosophical Magazine A Volume 71, 1995 - Issue 6
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Original Articles

Molecular dynamics simulation of low-energy collision cascades and atomic mixing in silicon

Vladimir Konoplev DFA-Departament de Física Aplicada, Universitat d'Alacant, Apt. 99, E-03080, Alacant, Spain
&
Albert Gras-marti DFA-Departament de Física Aplicada, Universitat d'Alacant, Apt. 99, E-03080, Alacant, Spain; Department of Mathematical Science, Loughborough University of Technology, Loughborough, Leicestershire, LE11 3TU, England
Pages 1265-1279 | Received 07 Nov 1994, Accepted 13 Nov 1994, Published online: 04 Oct 2006

Citations (6)

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Read on this site (1)

C.D. Denton, V.M. Konoplev, A. Gras-Martí & J.J. Jiménez-Rodríguez. (1997) Annealing of radiation damage in Si. A molecular dynamics study. Radiation Effects and Defects in Solids 141:1-4, pages 129-140.
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Articles from other publishers (5)

V. Belko, M. Posselt & E. Chagarov. (2003) Improvement of the repulsive part of the classical interatomic potential for SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 202, pages 18-23.
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Y. Miyagawa, H. Nakadate, F. Djurabekova & S. Miyagawa. (2002) Dynamic-sasamal: simulation software for high-dose ion implantation. Surface and Coatings Technology 158-159, pages 87-93.
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Monika Koster & Herbert M. Urbassek. (2000) Stress relaxation in induced by ion bombardment . Physical Review B 62:16, pages 11219-11224.
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Hartmut Hensel & Herbert M. Urbassek. (1998) Implantation and damage under low-energy Si self-bombardment. Physical Review B 57:8, pages 4756-4763.
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Y. Yamamura, T. Kenmotsu, K. Yorizane & T. Muramoto. (1998) Progress in computer simulation for ion-solid interaction. Progress in computer simulation for ion-solid interaction.

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