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Philosophical Magazine A Volume 73, 1996 - Issue 2
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Original Articles

High resolution electron microscopy of dissociated dislocations in silicon with a normal-incident electron beam

K. Suzuki Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato-ku, Tokyo, 106, Japan
,
N. Maeda Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato-ku, Tokyo, 106, Japan; NTT Basic Research Laboratories, Morinosato, Atsugi, 243-01, Japan
&
S. Takeuchi Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato-ku, Tokyo, 106, Japan
Pages 431-441 | Received 05 Jun 1995, Accepted 17 Jul 1995, Published online: 04 Oct 2006

Citations (17)

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Read on this site (5)

S. Neily, S. Youssef, A. Gutakovskii & R. Bonnet. (2011) On triple dislocation nodes observed by TEM in a Ge0.4Si0.6 film grown on a slightly deviating (0 0 1)Si substrate. Philosophical Magazine Letters 91:8, pages 510-515.
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R. Bonnet, M. Loubradou, S. Youssef, J.-L. Rouvière & F. Fournel. (2009) Alternate dissociation of the screw dislocations in a (0 0 1) buried small-angle twist boundary in silicon. Philosophical Magazine 89:5, pages 413-434.
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S. Youssef & R. Bonnet. (2007) The elastic potential energy of a thin foil deformed by an in-plane 60° dislocation. Philosophical Magazine 87:31, pages 4935-4948.
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S. Youssef & R. Bonnet. (2006) A dissociated dislocation in an ultrathin silicon plate. Philosophical Magazine 86:20, pages 3077-3088.
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J.C. H. Spence & C. Koch. (2001) On the measurement of dislocation core periods by nanodiffraction. Philosophical Magazine B 81:11, pages 1701-1711.
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Articles from other publishers (12)

Salem Neily, Sami Youssef, Anton Gutakovskii & Roland Bonnet. (2011) Inclined misfit dislocations in a film/substrate system. physica status solidi (a) 208:8, pages 1896-1901.
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Sami Youssef, Mustapha Fnaiech & Roland Bonnet. (2007) Elastic instability of slip traces in oxidized thin foils. physica status solidi (b) 244:6, pages 1908-1912.
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John C.H. Spence. 2007. 419 452 .
Roland Bonnet & Sami Youssef. (2006) Équilibre d'une dislocation dissociée placée dans une lame mince élastiquement anisotrope. Comptes Rendus Physique 7:5, pages 567-572.
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Ahlem Boussaïd, Frank Fournel & Roland Bonnet. (2005) Tests by TEM contrast simulations of the elastic field of a buried (001) low angle twist boundary in silicon. physica status solidi (b) 242:15, pages 3091-3098.
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John Spence & Christoph Koch. (2001) Experimental evidence for dislocation core structures in silicon. Scripta Materialia 45:11, pages 1273-1278.
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J.C.H. Spence. (1999) The future of atomic resolution electron microscopy for materials science. Materials Science and Engineering: R: Reports 26:1-2, pages 1-49.
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H. Alexander, H. R. Kolar & J. C. H. Spence. (1999) Kinks on Partials of 60° Dislocations in Silicon as Revealed by a Novel TEM Technique. physica status solidi (a) 171:1, pages 5-16.
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M. Inoue, K. Suzuki, H. Amasuga, M. Nakamura, Y. Mera, S. Takeuchi & K. Maeda. (1998) Reliable image processing that can extract an atomically-resolved line shape of partial dislocations in semiconductors from plan-view high-resolution electron microscopic images. Ultramicroscopy 75:1, pages 5-14.
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Masafumi Inoue, Kunio Suzuki, Hirotaka Amasuga, Yutaka Mera & Koji Maeda. (1998) Electronically enhanced kink motion on 30° partial dislocations in Ge directly observed by plan-view high resolution electron microscopy. Journal of Applied Physics 83:4, pages 1953-1957.
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Amand George. (1997) Plastic deformation of semiconductors: some recent advances and persistent challenges. Materials Science and Engineering: A 233:1-2, pages 88-102.
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K. Maeda, M. Inoue, K. Suzuki, H. Amasuga, M. Nakamura & E. Kanematsu. (1997) High Resolution Electron Microscopic Studies of the Atomistic Glide Processes in Semiconductors. Journal de Physique III 7:7, pages 1451-1467.
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