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Philosophical Magazine A Volume 77, 1998 - Issue 1
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Original Articles

Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopy

D. Cherns H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, England
,
W. T. Young H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, England
,
M. Sanders H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, England
,
J. W. Steeds H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, England
,
F. A. Ponce Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California, USA
&
S. Nakamura Nichia Chemical Industries, 491 Oka, Kaminaka, Anan, Tokushima, 774, Japan
Pages 273-286 | Received 20 Feb 1997, Accepted 04 Aug 1997, Published online: 12 Aug 2009

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D. P. Nicholls, R. Vincent, D. Cherns, Y. Sun & M. N. R. Ashfold. (2007) Polarity determination of zinc oxide nanorods by defocused convergent-beam electron diffraction. Philosophical Magazine Letters 87:6, pages 417-421.
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V. Potin, G. Nouet & P. Ruterana. (1999) The {1010} inversion domains in GaN/sapphire layers: An electron microscopy analysis of the atomic structure of the boundaries. Philosophical Magazine A 79:12, pages 2899-2919.
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Katsuhide Niki, Toru Akiyama & Tomonori Ito. (2022) An ab initio-based approach for the formation of pyramidal inversion domain boundaries in highly Mg-doped GaN. Japanese Journal of Applied Physics 61:5, pages 055503.
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Youhua Zhu, Tao Hu, Meiyu Wang, Yi Li, Mei Ge, Xinglong Guo, Honghai Deng & Zhitao Chen. (2022) Characterization of the Micro-Structural Properties of InAlN/GaN Epilayer Grown by MOCVD. Crystals 12:2, pages 203.
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M. M. F. Umar & Jorge O. Sofo. (2021) Inversion domain boundaries in wurtzite GaN. Physical Review B 103:16.
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Po-Yi Su, Hanxiao Liu, Shuo Wang, Zhihao Wu, Rong Liu & Fernando A. Ponce. (2020) The effect of low-angle off-axis GaN substrate orientation on the surface morphology of Mg-doped GaN epilayers. Journal of Applied Physics 128:5.
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Paul D. Brown. 2017. Springer Handbook of Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials 1 1 .
Katsushi Tanaka, Norihiko L. Okamoto, Satoshi Fujio, Hiroki Sakamoto & Haruyuki Inui. (2015) Appropriate zone-axis orientations for the determination of crystal polarity by convergent-beam electron diffraction. Journal of Applied Crystallography 48:3, pages 736-746.
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Ya’akov Greenberg, Sergei Remennik, Shimon Cohen, Dan Ritter & Louisa Meshi. (2013) Characterization of structural defects in highly mismatched GaP nanowires. Materials Letters 113, pages 38-41.
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Q. Y. Wei, T. Li, Y. Huang, J. Y. Huang, Z. T. Chen, T. Egawa & F. A. Ponce. (2012) Compositional instability in InAlN/GaN lattice-matched epitaxy. Applied Physics Letters 100:9.
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F A Ponce. (2011) Microstructure and polarization fields in nitride semiconductors. Journal of Physics: Conference Series 326, pages 012001.
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Yan-Ling Hu, Stefan Kraemer, Paul T. Fini & James S. Speck. (2011) Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth. Journal of Crystal Growth 331:1, pages 49-55.
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F.A. Ponce. (2010) Electrostatic energy profiles at nanometer‐scale in group III nitride semiconductors using electron holography. Annalen der Physik 523:1-2, pages 75-86.
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L. Meshi, B. Grushko & V. Ezersky. (2009) Identification of a new hexagonal phase in the Al–Cu–Re system. Journal of Alloys and Compounds 488:1, pages 108-111.
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J. Kioseoglou, Ph. Komninou & Th. Karakostas. (2008) Interatomic potential calculations of III(Al, In)–N planar defects with a III‐species environment approach. physica status solidi (b) 245:6, pages 1118-1124.
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Hadis Morkoç. 2008. Handbook of Nitride Semiconductors and Devices. Handbook of Nitride Semiconductors and Devices 817 1229 .
D. Cherns, L. Meshi, I. Griffiths, S. Khongphetsak, S. V. Novikov, N. Farley, R. P. Campion & C. T. Foxon. 2008. EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany 47 48 .
Paul Brown. 2007. Springer Handbook of Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials 343 371 .
H. Zhou, F. Phillipp, H. Schröder & J.M. Bell. (2005) Influence of domain boundaries on polarity of GaN grown on sapphire. Applied Surface Science 252:2, pages 483-487.
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C. Iwamoto, X. Q. Shen, H. Okumura, H. Matsuhata & Y. Ikuhara. (2003) Termination mechanism of inversion domains by stacking faults in GaN. Journal of Applied Physics 93:6, pages 3264-3269.
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H. Zhou, T. Rupp, F. Phillipp, G. Henn, M. Gross, A. Rühm & H. Schröder. (2003) Growth and microstructural characterizations of GaN films grown by laser induced reactive epitaxy. Journal of Applied Physics 93:4, pages 1933-1940.
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A.M Sánchez, F.J Pacheco, S.I Molina, P Ruterana, F Calle, T.A Palacios, M.A Sánchez-Garcı́a, E Calleja & R Garcı́a. (2002) AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111). Materials Science and Engineering: B 93:1-3, pages 181-184.
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Chihiro Iwamoto, Xu-Qiang Shen, Hajime Okumura, Hirofumi Matsuhata & Yuuichi Ikuhara. (2002) Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy. MATERIALS TRANSACTIONS 43:7, pages 1542-1546.
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R. Liu, A. Bell, F. A. Ponce, D. Cherns, H. Amano & I. Akasaki. (2011) Distinct Magnesium Incorporation Behavior in Laterally Grown AlGaN. MRS Proceedings 743.
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C. Iwamoto, X. Q. Shen, H. Okumura, H. Matuhata & Y. Ikuhara. (2001) Nanometric inversion domains in conventional molecular-beam-epitaxy GaN thin films observed by atomic-resolution high-voltage electron microscopy. Applied Physics Letters 79:24, pages 3941-3943.
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G. P. Dimitrakopulos, Ph. Komninou, J. Kioseoglou, Th. Kehagias, E. Sarigiannidou, A. Georgakilas, G. Nouet & Th. Karakostas. (2001) Structural transition of inversion domain boundaries through interactions with stacking faults in epitaxial GaN. Physical Review B 64:24.
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G.P. Dimitrakopulos, Ph. Komninou & R.C. Pond. (2001) Topological Analysis of Defects in Epitaxial Nitride Films and Interfaces. physica status solidi (b) 227:1, pages 45-92.
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P. Ruterana & G. Nouet. (2001) Atomic Structure of Extended Defects in Wurtzite GaN Epitaxial Layers. physica status solidi (b) 227:1, pages 177-228.
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P. Ruterana, J. Chen & G. Nouet. (2001) The atomic structure and properties of wurtzite GaN epitaxial layers. Materials Science and Engineering: B 82:1-3, pages 123-127.
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A. M. Sánchez, F. J. Pacheco, S. I. Molina, R. Garcia, P. Ruterana, M. A. Sánchez-Garcı́a & E. Calleja. (2001) Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy. Applied Physics Letters 78:18, pages 2688-2690.
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H. Zhou, A. Rühm, N. Y. Jin-Phillipp, F. Phillipp, M. Gross & H. Schröder. (2011) Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy. Journal of Materials Research 16:1, pages 261-267.
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Paul D Brown. (2000) TEM assessment of GaN epitaxial growth. Journal of Crystal Growth 210:1-3, pages 143-150.
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S. Ruvimov. 2000. III-Nitride Semiconductors: Electrical, Structural and Defects Properties. III-Nitride Semiconductors: Electrical, Structural and Defects Properties 51 75 .
H. Zhou, F. Phillipp, M. Gross & H. Schröder. (1999) Transmission electron microscopic studies of GaN grown on silicon carbide and sapphire by laser induced molecular beam epitaxy. Materials Science and Engineering: B 68:1, pages 26-34.
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D. Cherns, J. Barnard & H. Mokhtari. (1999) Characterisation of defects and piezoelectric fields in InGaN/GaN layers by transmission electron microscopy. Materials Science and Engineering: B 66:1-3, pages 33-38.
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John E. Northrup. (1999) Structure of the {1120} inversion domain boundary in GaN. Physica B: Condensed Matter 273-274, pages 130-133.
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J.L. Weyher, P.D. Brown, A.R.A. Zauner, S. Müller, C.B. Boothroyd, D.T. Foord, P.R. Hageman, C.J. Humphreys, P.K. Larsen, I. Grzegory & S. Porowski. (1999) Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD). Journal of Crystal Growth 204:4, pages 419-428.
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V. Potin, P. Ruterana & G. Nouet. (1999) TEM study of inversion domains in GaN layers grown on (0001) sapphire substrate. Materials Science and Engineering: B 59:1-3, pages 173-176.
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B Barbaray, V Potin, P Ruterana & G Nouet. (1999) Inversion domains generated at substrate steps in GaN/(0001) Al2O3 layers. Diamond and Related Materials 8:2-5, pages 314-318.
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V. Potin, G. Nouet & P. Ruterana. (1999) Evidence for multiple atomic structure for the {101̄0} inversion domain boundaries in GaN layers. Applied Physics Letters 74:7, pages 947-949.
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H. Zhou, F. Phillipp, M. Gross & H. Schröder. (2012) Microstructral Investigations on GaN Films Grown by Laser Induced Molecular Beam Epitaxy. MRS Proceedings 595.
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E. S. Hellman. (2014) The Polarity of GaN: a Critical Review. MRS Internet Journal of Nitride Semiconductor Research 3.
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