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Philosophical Magazine A Volume 77, 1998 - Issue 2
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Original Articles

On the mechanism of {111}-defect formation in silicon studied by in situ electron irradiation in a high resolution electron microscope

L. Fedina Institute of Semiconductor Physics, pr. acad. Lavrentyeva 13, 630090, Novosibitsk, Russia; University of Antwerp, RUCA EMAT, Groenenborgerlaan 171, B2020, Antwerpen, Belgium
,
A. Gutakovskii Institute of Semiconductor Physics, pr. acad. Lavrentyeva 13, 630090, Novosibitsk, Russia
,
A. Aseev Institute of Semiconductor Physics, pr. acad. Lavrentyeva 13, 630090, Novosibitsk, Russia
,
J. Van Landuyt University of Antwerp, RUCA EMAT, Groenenborgerlaan 171, B2020, Antwerpen, Belgium
&
J. Vanhellemont Interuniversity Microelectronics Center (IMEC), B3001, Leuven, Belgium; Wacker Siltronic AG, PO Box 1140, D-84479, Burghausen, Germany
Pages 423-435 | Received 25 Oct 1996, Accepted 02 Jun 1997, Published online: 12 Aug 2009

Citations (27)

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J. Yamasaki, Y. Ohno, S. Takeda & Y. Kimura. (2003) Extended vacancy-type defects in silicon induced at low temperatures by electron irradiation. Philosophical Magazine 83:2, pages 151-163.
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Articles from other publishers (26)

L. I. Fedina, A. K. Gutakovskii, V. I. Vdovin & T. S. Shamirzaev. (2021) Structural Transformations of the Dislocation Cores in Si and Their Relationship with Photoluminescence. Crystallography Reports 66:4, pages 636-643.
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Yutaka Ohno, Takehiro Tamaoka, Hideto Yoshida, Yasuo Shimizu, Kentaro Kutsukake, Yasuyoshi Nagai & Noritaka Usami. (2020) Origin of recombination activity of non-coherent Σ3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots. Applied Physics Express 14:1, pages 011002.
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Luis A. Marqués, María Aboy, Manuel Ruiz, Iván Santos, Pedro López & Lourdes Pelaz. (2019) {001} loops in silicon unraveled. Acta Materialia 166, pages 192-201.
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Frances M. Ross & Andrew M. Minor. 2019. Springer Handbook of Microscopy. Springer Handbook of Microscopy 101 187 .
Iván Santos, Manuel Ruiz, María Aboy, Luis A. Marqués, Pedro López & Lourdes Pelaz. (2018) Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation. Journal of Electronic Materials 47:9, pages 4955-4958.
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L. I. Fedina, A. K. Gutakovskii & T. S. Shamirzaev. (2018) On the structure and photoluminescence of dislocations in silicon. Journal of Applied Physics 124:5.
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A. A. Shklyaev, V. A. Volodin, M. Stoffel, H. Rinnert & M. Vergnat. (2018) Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting. Journal of Applied Physics 123:1.
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L.I. Fedina, A.K. Gutakovskii, A.V. Latyshev & A.L. Aseev. 2017. Advances in Semiconductor Nanostructures. Advances in Semiconductor Nanostructures 383 407 .
Claire Y. Chuang, Andreas Sattler & Talid Sinno. (2015) Thermodynamic and morphological analysis of large silicon self-interstitial clusters using atomistic simulations. Journal of Applied Physics 117:13.
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Talid Sinno. 2015. Handbook of Crystal Growth. Handbook of Crystal Growth 137 173 .
L. I. Fedina, A. K. Gutakovskii & A. V. Latyshev. (2014) Atomic structure of extended defects in boron-implanted silicon layers. Optoelectronics, Instrumentation and Data Processing 50:3, pages 241-246.
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Ludmila I. Fedina, Se Ahn Song, Andrey L. Chuvilin, Anton K. Gutakovskii & Alexander V. Latyshev. (2013) The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation . Microscopy and Microanalysis 19:S5, pages 38-42.
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L. I. Fedina, D. V. Sheglov, A. K. Gutakovskii, S. S. Kosolobov & A. V. Latyshev. (2010) Precise measurements of nanostructure parameters. Optoelectronics, Instrumentation and Data Processing 46:4, pages 301-311.
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Sumeet S. Kapur & Talid Sinno. (2010) Detailed microscopic analysis of self-interstitial aggregation in silicon. I. Direct molecular dynamics simulations of aggregation. Physical Review B 82:4.
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Hyoungki Park & John W. Wilkins. (2009) Relative stability of extended interstitial defects in silicon: First-principles calculations. Physical Review B 79:24.
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Lili Cai, Yangxian Li, Guifeng Chen, Xinghua Li, Jiangang Hao & Yu Zhang. (2006) Investigation of irradiation donors in electron irradiated CZ-Si. Investigation of irradiation donors in electron irradiated CZ-Si.
Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko & L.V. Sokolov. (2004) Heterostructures GexSi1−x/Si(001) (x=0.18–0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation. Thin Solid Films 466:1-2, pages 69-74.
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J P Goss, P R Briddon & R Jones. (2004) Calculated properties of a {113} planar vacancy aggregate in Si. Journal of Physics: Condensed Matter 16:20, pages 3311-3318.
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V.I. Talanin. (2004) Nucleation, growth and transformation of microdefects in FZ-Si. Semiconductor Physics, Quantum Electronics and Optoelectronics 7:1, pages 16-21.
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Yu. B. Bolkhovityanov, O. P. Pchelyakov, L. V. Sokolov & S. I. Chikichev. (2003) Artificial GeSi substrates for heteroepitaxy: Achievements and problems. Semiconductors 37:5, pages 493-518.
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J. P. Goss, B. J. Coomer, R. Jones, C. J. Fall, P. R. Briddon & S. Öberg. (2003) Extended defects in diamond: The interstitial platelet. Physical Review B 67:16.
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L. I. Fedina. (2001) Recombination of point defects and their interaction with the surface in the course of the clusterization of these defects in Si. Semiconductors 35:9, pages 1072-1080.
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L Fedina, A Gutakovskii & A Aseev. (2001) FZ-Si crystal growth and HREM study of new types of extended defects during in situ electron irradiation. Journal of Crystal Growth 229:1-4, pages 1-5.
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L. Fedina, O. I. Lebedev, G. Van Tendeloo, J. Van Landuyt, O. A. Mironov & E. H. C. Parker. (2000) In situ HREM irradiation study of point-defect clustering in MBE-grown strained structures . Physical Review B 61:15, pages 10336-10345.
Crossref
V. F. Stas’, I. V. Antonova, E. P. Neustroev, V. P. Popov & L. S. Smirnov. (2000) Thermal acceptors in irradiated silicon. Semiconductors 34:2, pages 155-160.
Crossref
L. Fedina, A. Gutakovskii, A. Aseev, J. Van Landuyt & J. Vanhellemont. (1999) Extended Defects Formation in Si Crystals by Clustering of Intrinsic Point Defects Studied by in-situ Electron Irradiation in an HREM. physica status solidi (a) 171:1, pages 147-158.
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