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Nuño Amador-Mendez, Tiphaine Mathieu-Pennober, Stéphane Vézian, Marie-Pierre Chauvat, Magali Morales, Pierre Ruterana, Andrey Babichev, Fabien Bayle, François H. Julien, Sophie Bouchoule, Stéphane Collin, Bernard Gil, Nicolas Tappy, Anna Fontcuberta i Morral, Benjamin Damilano & Maria Tchernycheva. (2022) Porous Nitride Light-Emitting Diodes. ACS Photonics 9:4, pages 1256-1263.
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M. M. F. Umar & Jorge O. Sofo. (2021) Inversion domain boundaries in wurtzite GaN. Physical Review B 103:16.
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Ranim Mohamad & Pierre Ruterana. (2020) Indium segregation mechanism and V-defect formation at the [0001] InAlN surface: an ab-initio investigation. Journal of Physics D: Applied Physics 54:1, pages 015305.
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Pierre Ruterana, Magali Morales, Nicolas Chery, Thi Huong Ngo, Marie-Pierre Chauvat, Kaddour Lekhal, Benjamin Damilano & Bernard Gil. (2020) Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission. Journal of Applied Physics 128:22, pages 223102.
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Ni Li, Stéphane Labat, Steven J. Leake, Maxime Dupraz, Jérôme Carnis, Thomas W. Cornelius, Guillaume Beutier, Marc Verdier, Vincent Favre-Nicolin, Tobias U. Schülli, Olivier Thomas, Joël Eymery & Marie-Ingrid Richard. (2020) Mapping Inversion Domain Boundaries along Single GaN Wires with Bragg Coherent X-ray Imaging. ACS Nano 14:8, pages 10305-10312.
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Prerna Chauhan, S. Hasenöhrl, A. Minj, M.P. Chauvat, P. Ruterana & J. Kuzmík. (2020) Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer. Applied Surface Science 502, pages 144086.
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P. Chauhan, S. Hasenöhrl, E. Dobročka, M. P. Chauvat, A. Minj, F. Gucmann, Ľ. Vančo, J. KováčJr.Jr., S. Kret, P. Ruterana, M. Kuball, P. Šiffalovič & J. Kuzmík. (2019) Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD. Journal of Applied Physics 125:10.
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Siqian Li, Huaping Lei, Yi Wang, Md Barkat Ullah, Jun Chen, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç & Pierre Ruterana. (2018) Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary. ACS Applied Materials & Interfaces 10:43, pages 37651-37660.
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Siqian Li, Huaping Lei, Zhuo Wang, Jun Chen & Pierre Ruterana. (2017) Energetic and Electronic Properties of (0001) Inversion Domain Boundaries in ZnO. physica status solidi (b) 255:4.
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H. BEN AMMAR, A. MINJ, M.‐P. CHAUVAT, P. GAMARRA, C. LACAM, M. MORALES & P. RUTERANA. (2017) The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template. Journal of Microscopy 268:3, pages 269-275.
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Md. Barkat Ullah, Vitaliy Avrutin, Si Qian Li, Saikat Das, Morteza Monavarian, Mykyta Toporkov, Ümit Özgür, Pierre Ruterana & Hadis Morkoç. (2016) Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire. physica status solidi (RRL) – Rapid Research Letters 10:9, pages 682-686.
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Pierre Ruterana, Marie-Pierre Chauvat & Katharina Lorenz. (2015) Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission. Semiconductor Science and Technology 30:4, pages 044004.
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D. Skuridina, D.V. Dinh, M. Pristovsek, B. Lacroix, M.-P. Chauvat, P. Ruterana, M. Kneissl & P. Vogt. (2014) Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers. Applied Surface Science 307, pages 461-467.
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T. Koukoula, J. Kioseoglou, Th. Kehagias, A. O. Ajagunna, Ph. Komninou & A. Georgakilas. (2014) Self-annihilation of inversion domains by high energy defects in III-Nitrides. Applied Physics Letters 104:14.
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O. V. Bilousov, J. J. Carvajal, A. Vilalta-Clemente, P. Ruterana, F. Díaz, M. Aguiló & C. O’Dwyer. (2014) Porous GaN and High-κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon. Chemistry of Materials 26:2, pages 1243-1249.
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D. Skuridina, D. V. Dinh, B. Lacroix, P. Ruterana, M. Hoffmann, Z. Sitar, M. Pristovsek, M. Kneissl & P. Vogt. (2013) Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy. Journal of Applied Physics 114:17.
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Yan-Ling Hu, Stefan Kraemer, Paul T. Fini & James S. Speck. (2011) Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth. Journal of Crystal Growth 331:1, pages 49-55.
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Yadira Arroyo Rojas Dasilva, Piere Ruterana, Lise Lahourcade, Eva Monroy & Gilles Nataf. (2010) Extended Crystallographic Defects in Gallium Nitride. Materials Science Forum 644, pages 117-122.
Crossref
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J. Kioseoglou, Ph. Komninou & Th. Karakostas. (2008) Interatomic potential calculations of III(Al, In)–N planar defects with a III‐species environment approach. physica status solidi (b) 245:6, pages 1118-1124.
Crossref
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S. Tomiya, O. Goto, Y. Hoshina, T. Tanaka & M. Ikeda. (2006) Multiple defects in GaInN multiple quantum wells grown on ELO GaN layers and on GaN substrates. physica status solidi c 3:6, pages 1779-1782.
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Won Ha Moon & Chang Hwan Choi. (2006) Molecular-dynamics study of inversion domain boundary in w-GaN. Physics Letters A 352:6, pages 538-542.
Crossref
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G. P. Dimitrakopulos, A. M. Sanchez, Ph. Komninou, Th. Kehagias, Th. Karakostas, G. Nouet & P. Ruterana. (2005) Interfacial steps, dislocations, and inversion domain boundaries in the GaN/AlN/Si (0001)/(111) epitaxial system. physica status solidi (b) 242:8, pages 1617-1627.
Crossref
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J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, H. M. Polatoglou, A. Serra, A. Béré, G. Nouet & Th. Karakostas. (2004) Junction lines of inversion domain boundaries with stacking faults in GaN. Physical Review B 70:11.
Crossref
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J. Kioseoglou, A. Béré, G.P. Dimitrakopulos, A. Serra, G. Nouet & Ph. Komninou. (2003) Atomic structure and energy of junctions between inversion domain boundaries and stacking faults in wurtzite GaN. physica status solidi (c):7, pages 2464-2469.
Crossref
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Leonid A. Bendersky, Denis V. Tsvetkov & Yuriy V. Melnik. (2003) Transmission electron microscopy study of a defected zone in GaN on a SiC substrate grown by hydride vapor phase epitaxy. Journal of Applied Physics 94:3, pages 1676-1685.
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P Ruterana & G Nouet. (2003) Analysis of the atomic structure of interfaces and defects in wurtzite nitride semiconductors. Materials Chemistry and Physics 81:2-3, pages 249-252.
Crossref
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J. Kioseoglou, Ph. Komninou, G.P. Dimitrakopulos, Th. Kehagias, H.M. Polatoglou, G. Nouet & Th. Karakostas. (2003) Microstructure of planar defects and their interactions in wurtzite GaN films. Solid-State Electronics 47:3, pages 553-557.
Crossref
Crossref
H.P. Maruska, D.W. Hill, M.M.C. Chou, J.J. Gallagher, B.H. Chai, R. Vanfleet, J. Simmons, A. Bhattacharyya, I. Friel, Tai-Chou Chen, W. Li, J. Cabalu, Y. Fedyunin, K.F. Ludwig & T.D. Moustakas. (2003) Development of 50 mm diameter non-polar gallium nitride substrates for device applications. Development of 50 mm diameter non-polar gallium nitride substrates for device applications.
A.M Sánchez, F.J Pacheco, S.I Molina, P Ruterana, F Calle, T.A Palacios, M.A Sánchez-Garcı́a, E Calleja & R Garcı́a. (2002) AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(111). Materials Science and Engineering: B 93:1-3, pages 181-184.
Crossref
Crossref
J.L. Weyher, L. Macht, F.D. Tichelaar, H.W. Zandbergen, P.R. Hageman & P.K. Larsen. (2002) Complementary study of defects in GaN by photo-etching and TEM. Materials Science and Engineering: B 91-92, pages 280-284.
Crossref
Crossref
J. Kioseoglou, G.P. Dimitrakopulos, H.M. Polatoglou, L. Lymperakis, G. Nouet & Ph. Komninou. (2002) Atomic-scale models of interactions between inversion domain boundaries and intrinsic basal stacking faults in GaN. Diamond and Related Materials 11:3-6, pages 905-909.
Crossref
Crossref
G. P. Dimitrakopulos, Ph. Komninou, J. Kioseoglou, Th. Kehagias, E. Sarigiannidou, A. Georgakilas, G. Nouet & Th. Karakostas. (2001) Structural transition of inversion domain boundaries through interactions with stacking faults in epitaxial GaN. Physical Review B 64:24.
Crossref
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A. M. Sanchez, G. Nouet, P. Ruterana, F. J. Pacheco, S. I. Molina & R. Garcia. (2001) A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111). Applied Physics Letters 79:22, pages 3588-3590.
Crossref
Crossref
G.P. Dimitrakopulos, Ph. Komninou & R.C. Pond. (2001) Topological Analysis of Defects in Epitaxial Nitride Films and Interfaces. physica status solidi (b) 227:1, pages 45-92.
Crossref
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S. Kret, P. Ruterana, A. Rosenauer & D. Gerthsen. (2001) Extracting Quantitative Information from High Resolution Electron Microscopy. physica status solidi (b) 227:1, pages 247-295.
Crossref
Crossref
P. Ruterana & G. Nouet. (2001) Atomic Structure of Extended Defects in Wurtzite GaN Epitaxial Layers. physica status solidi (b) 227:1, pages 177-228.
Crossref
Crossref
A. M. Sánchez, F. J. Pacheco, S. I. Molina, R. Garcia, P. Ruterana, M. A. Sánchez-Garcı́a & E. Calleja. (2001) Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy. Applied Physics Letters 78:18, pages 2688-2690.
Crossref
Crossref
Philomela Komninou, Joseph Kioseoglou, Eirini Sarigiannidou, George P. Dimitrakopulos, Thomas Kehagias, Alexandros Georgakilas, Gerard Nouet & Pierre Ruterana. (2011) Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN. MRS Proceedings 639.
Crossref
Crossref
M.E. Twigg, D.D. Koleske, A.E. Wickenden, R.L. Henry, M. Fatemi & J.C. Culbertson. 2000. III-Nitride Semiconductors: Electrical, Structural and Defects Properties. III-Nitride Semiconductors: Electrical, Structural and Defects Properties
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