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Philosophical Magazine B Volume 40, 1979 - Issue 1
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Original Articles

Theory of doping of amorphous tetrahedrally bonded semiconductors

J. Robertson C.E.R.L., Leatherhead, Surrey, KT22 7SE, England
Pages 31-49 | Received 16 May 1978, Accepted 20 Mar 1979, Published online: 20 Aug 2006

Citations (12)

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Read on this site (2)

John Robertson. (1983) Electronic structure of amorphous semiconductors. Advances in Physics 32:3, pages 361-452.
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J. Robertson. (1980) Ionicity dependence of defect reactions and negative-U states in glasses, I. Philosophical Magazine B 41:6, pages 643-660.
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Articles from other publishers (10)

D. Gloaguen, Jamal Fajoui, Bruno Courant & Ronald Guillén. (2006) Numerical Study of the Influence of Dislocation Microstructure on Metallic Materials Mechanical Behaviour. Materials Science Forum 524-525, pages 511-516.
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I. Chambouleyron & A. R. Zanatta. (1998) Nitrogen in germanium. Journal of Applied Physics 84:1, pages 1-30.
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C. Cunha, S. Canuto & A. Fazzio. (1993) Role played by N and N-N impurities in type-IV semiconductors. Physical Review B 48:24, pages 17806-17810.
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I Chambouleyron. (1993) Hydrogenated amorphous germanium and its alloys. Journal of Physics: Condensed Matter 5:33A, pages A73-A80.
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A. R. Zanatta & I. Chambouleyron. (1992) Transport properties of nitrogen-doped hydrogenated amorphous germanium films. Physical Review B 46:4, pages 2119-2125.
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John Robertson. (1985) Doping mechanism in a -Si:H . Physical Review B 31:6, pages 3817-3821.
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John Robertson. (1983) Dopant states in -Si: H. I. Tight-binding-model results . Physical Review B 28:8, pages 4647-4657.
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Y. Takano, T. Sato, N. Kitaoka & H. Ozaki. (1983) The effect of nitrogen doping on amorphous germanium. Journal of Non-Crystalline Solids 55:3, pages 325-333.
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John D. Joannopoulos & Douglas C. Allan. 1981. Festkörperprobleme 21. Festkörperprobleme 21 167 190 .
J. Robertson. 1981. Recent Developments in Condensed Matter Physics. Recent Developments in Condensed Matter Physics 231 238 .

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