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Original Articles

Metal non-metal transition in phosphorus-doped silicon

Pages 725-733 | Received 09 Mar 1980, Accepted 31 Mar 1980, Published online: 20 Aug 2006

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Read on this site (3)

N.F. Mott & M. Kaveh. (1983) Metal—insulator transition in doped silicon. Philosophical Magazine B 47:6, pages 577-603.
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PtitljrP. Fcdwards & M.J. Sienko. (1983) What is a Metal?. International Reviews in Physical Chemistry 3:1, pages 83-137.
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R. Riklund, A. Ferreira Da Silva & K.A. Chao. (1980) Modified mott-hubbard-anderson model results of an unrestricted hartree-fock pseudocluster calculation. Philosophical Magazine B 42:6, pages 755-761.
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Articles from other publishers (19)

Karl W. Böer & Udo W. PohlKarl W. Böer & Udo W. Pohl. 2023. Semiconductor Physics. Semiconductor Physics 899 931 .
Karl W. Böer & Udo W. PohlKarl W. Böer & Udo W. Pohl. 2020. Semiconductor Physics. Semiconductor Physics 1 33 .
Karl W. Böer & Udo W. PohlKarl W. Böer & Udo W. Pohl. 2020. Semiconductor Physics. Semiconductor Physics 1 33 .
Karl W. Böer & Udo W. PohlKarl W. Böer & Udo W. Pohl. 2018. Semiconductor Physics. Semiconductor Physics 815 846 .
Karl W. Böer & Udo W. PohlKarl W. Böer & Udo W. Pohl. 2019. Semiconductor Physics. Semiconductor Physics 1 32 .
Karl W. Böer & Udo PohlKarl W. Böer & Udo W. Pohl. 2017. Semiconductor Physics. Semiconductor Physics 1 32 .
Yasuyuki Nagai & Keigo Nagasaka. (2006) Mn-impurity-conduction-mediated ferromagnetic ordering in Ga1−xMnxAs (x=0.034 and x=0.050). Infrared Physics & Technology 48:1, pages 1-15.
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Hilbert v. Löhneysen. 1990. Festkörperprobleme 30. Festkörperprobleme 30 95 111 .
A Stesmans. (1988) The application of submetallic phosphorus-doped Si as ESR marker. Journal of Magnetic Resonance (1969) 76:1, pages 14-21.
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Jesús A. del Alamo & Richard M. Swanson. (1987) Modelling of minority-carrier transport in heavily doped silicon emitters. Solid-State Electronics 30:11, pages 1127-1136.
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A. Stesmans. (2006) Interaction between Localized and Delocalized States Indicated from Temperature‐Dependent ESR Study of Submetallic P‐Doped Si. physica status solidi (b) 143:2, pages 733-740.
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R.F. MILLIGAN, T.F. ROSENBAUM, R.N. BHATT & G.A. THOMAS. 1985. Electron–Electron Interactions in Disordered Systems. Electron–Electron Interactions in Disordered Systems 231 286 .
W.N. Shafarman, T.G. Castner, J.S. Brooks, K.P. Martin & M.J. Naughton. (1985) The low temperature magnetoresistance of arsenic-doped silicon near the metal—Insulator transition. Solid-State Electronics 28:1-2, pages 93-99.
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Y. N. Yang, D. D. Coon & P. F. Shepard. (1984) Thermionic emission in silicon at temperatures below 30 K. Applied Physics Letters 45:7, pages 752-754.
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M A Howson & D Greig. (1983) Magnetoresistance of amorphous metallic alloys: evidence for Coulombic interaction effects. Journal of Physics F: Metal Physics 13:8, pages L155-L158.
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R. Riklund & K. A. Chao. (1982) Concentration-fluctuation model of a doped semiconductor in the nonmetallic regime: Pseudocluster investigation. Physical Review B 26:4, pages 2168-2180.
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. (1997) Review lecture: Metal–insulator transitions. Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences 382:1782, pages 1-24.
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T. F. Rosenbaum, R. F. Milligan, G. A. Thomas, P. A. Lee, T. V. Ramakrishnan, R. N. Bhatt, K. DeConde, H. Hess & T. Perry. (1981) Low-Temperature Magnetoresistance of a Disordered Metal. Physical Review Letters 47:24, pages 1758-1761.
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K. A. M?ller, T. Penney, M. W. Shafer & W. J. Fitzpatrick. (1981) Pauli Paramagnetism in a Fermi Glass. Physical Review Letters 47:2, pages 138-142.
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