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Philosophical Magazine B Volume 42, 1980 - Issue 6
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Original Articles

Metal-insulator transitions in amorphous semiconductors

K. Morigaki Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo, 106, Japan
Pages 979-1001 | Received 09 Mar 1980, Accepted 31 Mar 1980, Published online: 20 Aug 2006

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A. Goldenblum, V. Teodorescu, F.E. Wagner, R. Manaila, G. Filoti, J.P. Deville, D. Pantelica, F. Negoita, A. Belu-marian & N. Scantee. (2002) Structural properties of sputtered ZnO: Au films. Philosophical Magazine A 82:1, pages 193-204.
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A.M. Edwards, M.C. Fairbanks & R.J. Newport. (1991) Structural studies of amorphous Ge-Au alloys. Philosophical Magazine B 63:2, pages 457-463.
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A. Audouard, A. Kazoun, N. Cherradi, G. Marchal & M. Gerl. (1989) Electrical conductivity mechanisms in Au Si1− -amorphous alloys. Philosophical Magazine B 59:2, pages 207-220.
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V. Voegele, S. Kalbitzer & K. Böhringer. (1985) Observation of correlation effects in the hopping transport in amorphous silicon. Philosophical Magazine B 52:2, pages 153-168.
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G.A. Thomas. (1984) Diffusion near the metal-insulator transition. Philosophical Magazine B 50:2, pages 169-174.
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Articles from other publishers (40)

Giuseppe Portale & Alessandro Longo. 2013. Characterization of Semiconductor Heterostructures and Nanostructures. Characterization of Semiconductor Heterostructures and Nanostructures 175 228 .
Joachim Sonntag. (2005) Disordered electronic systems. II. Phase separation and the metal-insulator transition in metal-metalloid alloys. Physical Review B 71:11.
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B T Williams, S J Gurman, S H Baker & E A Davis. (2000) Structure and properties of amorphous silicon-metal alloys: I. The Si 1- x Ni x system . Journal of Physics: Condensed Matter 12:27, pages 5971-5980.
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J. S. Rigden & R. J. Newport. (2011) Nanoscale Heterogeneities in Amorphous Semiconductor x metal 1– x Alloys: A Small-angle X-ray Scattering Study . Journal of Materials Research 14:4, pages 1272-1278.
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Runjin Gan, Fengmin Liu, Li Qi & Jizheng Wang. (2011) Gd-doping effects on properties of amorphous silicon films prepared by electron beam evaporations. Journal of Materials Research 13:7, pages 1795-1798.
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Runjin Gan, Fengmin Liu, Li Qi & Jizheng Wang. (1997) Nd-doping effects on properties of amorphous silicon films prepared by electron beam evaporations. Materials Letters 32:2-3, pages 91-95.
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A. I. Yakimov & A. V. Dvurechenskii. (1997) Metal-insulator transition in amorphous Si1−c Mnc obtained by ion implantation. Journal of Experimental and Theoretical Physics Letters 65:4, pages 354-358.
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Runjin Gan & Jizheng Wang. (1997) Er-doping effects on properties of amorphous silicon films prepared by electron beam evaporations. Thin Solid Films 293:1-2, pages 63-66.
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Hironobu Sakata & Norihisa Nakao. (1993) Electrical conductivity of amorphous chalcogenide films in AsSeSb system. Journal of Non-Crystalline Solids 163:3, pages 236-241.
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J. Fischer & H. v. Löhneysen. (2006) Electronic properties and superconductivity of amorphous Si 1‐ x Au x alloys near the metal‐insulator transition . Annalen der Physik 505:7, pages 635-646.
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A. Cros & P. Muret. (1992) Properties of noble-metal/silicon junctions. Materials Science Reports 8:6-7, pages 271-367.
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R. Asal, S.C. Bayliss & E.A. Davis. (1991) Semiconductor-to-metal transitions induced by pressure in the amorphous alloy system a-Si1?yNiy:H. Journal of Non-Crystalline Solids 137-138, pages 931-934.
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I.P. ZVYAGIN. 1991. Hopping Transport in Solids. Hopping Transport in Solids 143 174 .
B. Predel. 1991. Ac-Au – Au-Zr. Ac-Au – Au-Zr 1 5 .
A.M. Edwards, M.C. Fairbanks, R.J. Newport & S.J. Gurman. (1990) Structural studies of amorphous semiconductor-metal alloys. Vacuum 41:4-6, pages 1335-1338.
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E.A Davis, S.C Bayliss, R Asal & M Manssor. (1989) Free-carrier behaviour in a-Si1−yNiy:H. Journal of Non-Crystalline Solids 114, pages 465-467.
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A.M Edwards, M.C Fairbanks, R.J Newport, S.J Gurman & E.A Davis. (1989) Structural studies of amorphous Si:Ni:H. Journal of Non-Crystalline Solids 113:1, pages 41-50.
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Joachim Sonntag. (1989) Disordered electronic systems: Concentration dependence of the dc conductivity in amorphous transition-metal – metalloid alloys (metallic regime) . Physical Review B 40:6, pages 3661-3671.
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S. D. Kouimtzi. (2006) Localized States in Crystalline Semiconductors. physica status solidi (b) 153:2, pages 675-681.
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S D Kouimtzi. (1989) Hopping conduction in electron-irradiated boron-doped silicon. Journal of Physics: Condensed Matter 1:8, pages 1437-1448.
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S.D. Kouimtzi. (1988) Hopping conduction in electron-irradiated Ph-doped Si. Solid State Communications 65:11, pages 1439-1443.
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S D Kouimtzi. (1988) AC conductivity measurements for electron-irradiated InSb. Journal of Physics C: Solid State Physics 21:4, pages 681-687.
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P.K. Shufflebotham, H.C. Card & A. Thanailakis. (1987) A review of amorphous silicon alloys. Journal of Non-Crystalline Solids 92:2-3, pages 183-244.
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M. L. Kozhukh & N. S. Lipkina. (1987) The electrical conductivity of disordered germanium near the metal-insulator transition. Physica Status Solidi (a) 100:1, pages 259-267.
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U. Kambli, E. Huber & M. von Allmen. (1986) Electronic properties of glassy Pt-Si films. Physical Review B 33:12, pages 8643-8648.
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S. D. Kouimtzi. (1986) Ac conductivity measurements in electron- irradiated al-doped si. physica status solidi (a) 95:1, pages 317-321.
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A Mobius. (1985) The metal-semiconductor transition in three-dimensional disordered systems-reanalysis of recent experiments for and against minimum metallic conductivity. Journal of Physics C: Solid State Physics 18:24, pages 4639-4670.
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S.D. Kouimtzi. (1985) Hopping conductance in electron irradiated n-type GaAs. Solid State Communications 55:5, pages 447-450.
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M. I. Katsnelson & A. S. Shcherbakov. (2006) Temperature Dependences of Conductivity at Small Electron Mean Free Path. physica status solidi (b) 129:2, pages 813-822.
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C. Gladun, A. Heinrich, F. Lange, J. Schumann & H. Vinzelberg. (1985) Electrical transport properties of high resistance CrSiO thin films. Thin Solid Films 125:1-2, pages 101-106.
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A. A. Andreyev & I. S. Shlimak. 1985. Localization and Metal-Insulator Transitions. Localization and Metal-Insulator Transitions 239 258 .
A Mobius, D Elefant, A Heinrich, R Muller, J Schumann, H Vinzelberg & G Zies. (1983) The metal-semiconductor transition in amorphous Si 1-x Cr x films-scaling behaviour and minimum metallic conductivity . Journal of Physics C: Solid State Physics 16:33, pages 6491-6498.
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E. Huber & M. von Allmen. (1983) Optical properties of laser-melt-quenched Au-Si alloys. Physical Review B 28:6, pages 2979-2984.
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H. Okamoto & T. B. Massalski. (1983) The Au−Si (Gold-Silicon) system. Bulletin of Alloy Phase Diagrams 4:2, pages 190-198.
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G. A. Thomas, M. Paalanen & T. F. Rosenbaum. (1983) Measurements of conductivity near the metal-insulator critical point. Physical Review B 27:6, pages 3897-3900.
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M. Yamaguchi, N. Nishida, T. Furubayashi, K. Morigaki, H. Ishimoto & K. Ono. (1983) Metal-nonmetal transition and superconductivity in amorphous Si1?xAuxSystem. Physica B+C 117-118, pages 694-696.
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P.W. Anderson & Joseph Henry Laboratories. (1983) Localization redux. Physica B+C 117-118, pages 30-36.
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N. Nishida, M. Yamaguchi, T. Furubayashi, K. Morigaki, H. Ishimoto & K. Ono. (1982) Superconductivity and metal-insulator transition in amorphous Si1−xAux system. Solid State Communications 44:2, pages 305-309.
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G. A. Thomas, Y. Ootuka, S. Katsumoto, S. Kobayashi & W. Sasaki. (1982) Evidence for localization effects in compensated semiconductors. Physical Review B 25:6, pages 4288-4290.
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G. A. Thomas, T. F. Rosenbaum & R. N. Bhatt. (1981) Metallic Conductivity near the Metal-Insulator Transition. Physical Review Letters 46:21, pages 1435-1435.
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