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Philosophical Magazine B Volume 42, 1980 - Issue 4
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Original Articles

Luminescence in plasma-deposited Si–O alloys

R. A. Street Xerox Palo Alto Research Center, Palo Alto, California, 94304, U.S.A
&
J. C. Knights Xerox Palo Alto Research Center, Palo Alto, California, 94304, U.S.A
Pages 551-560 | Received 27 May 1980, Accepted 02 Jul 1980, Published online: 20 Aug 2006

Citations (33)

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Read on this site (2)

R.A. Street. (1981) Luminescence and recombination in hydrogenated amorphous silicon. Advances in Physics 30:5, pages 593-676.
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R.A. Street & J.C. Knights. (1981) Oxidation and interface states in a-Si: H. Philosophical Magazine B 43:6, pages 1091-1098.
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Articles from other publishers (31)

J. Kistner & M. B. Schubert. (2013) Impact of the hydrogen content on the photoluminescence efficiency of amorphous silicon alloys. Journal of Applied Physics 114:21.
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J. Kistner & M. B. Schubert. (2013) Origin and spectral degradation of the photoluminescence from a-SiOx. Journal of Applied Physics 114:19.
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Sumita Mukhopadhyay & Swati Ray. (2011) Silicon rich silicon oxide films deposited by radio frequency plasma enhanced chemical vapor deposition method: Optical and structural properties. Applied Surface Science 257:23, pages 9717-9723.
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Akın Bacıoğlu, Alp Osman Kodolbaş & Özcan Öktü. (2010) Temperature dependent photoluminescence of PECVD a-SiOx:H (x<2). Journal of Luminescence 130:10, pages 1730-1737.
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F Martineau, K Namur, J Mallet, F Delavoie, F Endres, M Troyon & M Molinari. (2009) Electrodeposition at room temperature of amorphous silicon and germanium nanowires in ionic liquid. IOP Conference Series: Materials Science and Engineering 6, pages 012012.
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A. Janotta, M. Schmidt, R. Janssen, M. Stutzmann & Ch. Buchal. (2003) Photoluminescence of -implanted amorphous hydrogenated silicon suboxides . Physical Review B 68:16.
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A Janotta, M Schmidt, R Janssen, Ch Buchal & M Stutzmann. (2002) Er3+ luminescence in a-SiOx:H. Journal of Non-Crystalline Solids 299-302, pages 688-693.
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R Janssen, A Janotta & M Stutzmann. (2000) Thermal stability of p-type doped amorphous silicon suboxides. Journal of Non-Crystalline Solids 266-269, pages 840-844.
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. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 4 .
R. Janssen, A. Janotta, D. Dimova-Malinovska & M. Stutzmann. (1999) Optical and electrical properties of doped amorphous silicon suboxides. Physical Review B 60:19, pages 13561-13572.
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S.-M. Chen, J.M. Shannon, R.M. Gwilliam & B.J. Sealy. (1999) Electrical characterization of a-SiOx:H produced by plasma immersion ion implantation. Solid-State Electronics 43:3, pages 599-607.
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P. Kn?pek, K. Luterov?I. Pelant, A. Fejfar, J. Ko?ka, J. Kudrna, P. Mal?R. Janssen & M. Stutzmann. (1998) Electroluminescent properties of a-SiOx:H alloys. Journal of Non-Crystalline Solids 227-230, pages 1160-1163.
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R. Janssen, U. Karrer, D. Dimova-Malinovska & M. Stutzmann. (1998) Amorphous silicon suboxide light-emitting diodes. Journal of Non-Crystalline Solids 227-230, pages 1151-1155.
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Yoshihiko Kanemitsu. (1996) Light-emitting silicon materials. Journal of Luminescence 70:1-6, pages 333-342.
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W. Boonkosum, D. Kruangam, B. Ratwises, T. Sujaridchai, S. Panyakeow, S. Fujikake & H. Sakai. (1996) Amorphous SiO:H thin film visible light emitting diode. Journal of Non-Crystalline Solids 198-200, pages 1226-1229.
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T. Fischer, T. Muschik, R. Schwarz, D. Kovalev & F. Koch. (2011) Luminescence Properties of Silicon Oxynitride Films. MRS Proceedings 358.
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M. Zacharias, H. Freistedt, F. Stolze, T.P. Drüsedau, M. Rosenbauer & M. Stutzmann. (1993) Properties of sputtered a-SiO :H alloys with a visible luminescence. Journal of Non-Crystalline Solids 164-166, pages 1089-1092.
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M. S. Brandt, H. D. Fuchs, A. Höpner, M. Rosenbauer, M. Stutzmann, J. Weber, M. Cardona & H. J. Queisser. (2012) Visible Luminescence from Silicon: Quantum Confinement or Siloxene?. MRS Proceedings 262.
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C.I. Ukah, J.M. Perz, R.V. Kruzelecky & S. Zukotynski. (1989) Oxygen traps in evaporated hydrogenated amorphous silicon. Journal of Non-Crystalline Solids 107:2-3, pages 301-308.
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W. Siebert, R. Carius, W. Fuhs & K. Jahn. (2006) Photoluminescence in a‐Si 1− x C x :H films . physica status solidi (b) 140:1, pages 311-321.
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K. Jiranapakul & J. Shirafuji. (1986) Effect of oxygen incorporation on properties of RF sputtered a-Si:H films. Journal of Non-Crystalline Solids 81:1-2, pages 29-40.
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R. Carius, K. Jahn, W. Siebert & W. Fuhs. (1984) Photoluminescence in amorphous alloys: a-SiOx:H, a-SiNx:H, a-SixC1-x:H. Journal of Luminescence 31-32, pages 354-356.
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M. Suhrke & B. Esser. (2006) Time‐Resolved Luminescence of Charge Carriers in Localized States in Amorphous Semiconductors. physica status solidi (b) 126:1, pages 393-406.
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R.A. Street. 1984. Hydrogenated Amorphous Silicon - Optical Properties. Hydrogenated Amorphous Silicon - Optical Properties 197 244 .
Hidehito Nanto, Tadatsugu Minami & Shinzo Takata. (1983) Intense white photoluminescence in ZnO thin film formed by anodization. Journal of Materials Science 18:9, pages 2721-2726.
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B. Esser. (2006) On the theory of time‐resolved band‐tail luminescence in amorphous semiconductors. physica status solidi (b) 114:1, pages 175-187.
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R. W. Collins & William Paul. (1982) Model for the temperature dependence of photoluminescence in -Si:H and related materials . Physical Review B 25:8, pages 5257-5262.
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S.M. OJHA. 1982. Physics of Thin Films - Advances in Research and Development. Physics of Thin Films - Advances in Research and Development 237 296 .
B. G. Yacobi, R. W. Collins, G. Moddel, P. Viktorovitch & W. Paul. (1981) Effect of oxygen on the optoelectronic properties of amorphous hydrogenated silicon. Physical Review B 24:10, pages 5907-5912.
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R. Carius, R. Fischer & E. Holzenk?mpfer. (1981) Photoluminescence of glow-discharge-prepared amorphous SiOX. Journal of Luminescence 24-25, pages 47-50.
Crossref
K. M. Hong, J. Noolandi & R. A. Street. (1981) Theory of radiative recombination by diffusion and tunneling in amorphous Si:H. Physical Review B 23:6, pages 2967-2976.
Crossref

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