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Philosophical Magazine B Volume 43, 1981 - Issue 3
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Original Articles

Implantation damage in amorphous silicon

G. Müller Carnegie Laboratory of Physics, University of Dundee, Dundee, DD1 4HN, Scotland; Max-Planck-Institut für Kernphysik, Postfach 103 980, 6900 Heidelberg, F.R., Germany.
&
P. G. Le Comber Carnegie Laboratory of Physics, University of Dundee, Dundee, DD1 4HN, Scotland; Max-Planck-Institut für Kernphysik, Postfach 103 980, 6900 Heidelberg, F.R., Germany.
Pages 419-431 | Received 11 Jun 1980, Accepted 16 Jul 1980, Published online: 20 Aug 2006

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Read on this site (3)

F.J. Fonseca, R. Galloni & A. Nylandsted Larsen. (1993) Electrical activation of potassium and phosphorus ions implanted in hydrogenated amorphous silicon. Philosophical Magazine B 67:1, pages 107-115.
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G. Krötz, J. Wind, H. Stitzl, G. Müller, S. Kalbitzer & H. Mannsperger. (1991) Experimental tests of the autocompensation model of doping. Philosophical Magazine B 63:1, pages 101-121.
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D.E. Carlson. (1990) The doping of hydrogenated amorphous silicon and its impact on devices. Critical Reviews in Solid State and Materials Sciences 16:6, pages 417-435.
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Articles from other publishers (23)

Tristan Carrere, Delfina Muñoz, Marianne Coig, Christophe Longeaud & Jean-Paul Kleider. (2017) p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application. Solar RRL 1:2, pages 1600007.
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B Pantchev, P Danesh, I Savatinova, E Liarokapis, B Schmidt & D Grambole. (2001) The effect of structural disorder on mechanical stress in a-Si:H films. Journal of Physics D: Applied Physics 34:17, pages 2589-2592.
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V. Chu, H. Silva, L.M. Redondo, C. Jesus, M.F. Silva, J.C. Soares & J.P. Conde. (1999) Ion implantation of microcrystalline silicon for low process temperature top gate thin film transistors. Thin Solid Films 337:1-2, pages 203-207.
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Gerhard Müller. (1998) Amorphisation processes in silicon. Current Opinion in Solid State and Materials Science 3:4, pages 364-370.
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M. A. Kroon, R. A. C. M. M. van Swaaij, M. Zeman, V. I. Kuznetsov & J. W. Metselaar. (1998) Hydrogenated amorphous silicon transverse junction solar cell. Applied Physics Letters 72:2, pages 209-210.
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A. Battaglia, S. Coffa, F. Priolo, C. Spinella & S. Libertino. (1995) Defect evolution in ion implanted crystalline Si probed by in situ conductivity measurements. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96:1-2, pages 219-222.
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L. Pavesi, G. Giebel, F. Ziglio, G. Mariotto, F. Priolo, S. U. Campisano & C. Spinella. (1994) Nanocrystal size modifications in porous silicon by preanodization ion implantation. Applied Physics Letters 65:17, pages 2182-2184.
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A. Battaglia, S. Coffa, F. Priolo & C. Spinella. (1994) Defect accumulation during ion irradiation of crystalline Si probed by in   situ conductivity measurements . Applied Physics Letters 65:3, pages 306-308.
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S. Coffa, A. Battaglia & F. Priolo. (2011) Ion Beam Induced Structural and Electrical Modifications in Crystalline and Amorphous Silicon. MRS Proceedings 316.
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A.J.M. Berntsen, P.A. Stolk, W.F. VAN DER WEG & F.W. Saris. (1993) Annealing of Ion-Implanted Hydrogenated Amorphous Silicon: Stable and Removable Damage. MRS Proceedings 297.
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H. Stitzl, G. Kr�tz & G. M�ller. (1991) Accumulation and annealing of implantation damage in a-Si:H. Applied Physics A Solids and Surfaces 53:3, pages 235-240.
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S. Roorda, W. C. Sinke, J. M. Poate, D. C. Jacobson, S. Dierker, B. S. Dennis, D. J. Eaglesham, F. Spaepen & P. Fuoss. (1991) Structural relaxation and defect annihilation in pure amorphous silicon. Physical Review B 44:8, pages 3702-3725.
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H. Stitzl, G. Kr�tz & G. M�ller. (1991) Autocompensation doping in light-soaked and in radiation-damaged a-Si:H. Applied Physics A Solids and Surfaces 52:5, pages 335-338.
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R. Galloni, Y. S. Tsuo, D. W. Baker & F. Zignani. (1990) Doping and hydrogenation by ion implantation of glow discharge deposited amorphous silicon films. Applied Physics Letters 56:3, pages 241-243.
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R. Galloni, Y.S. Tsuo, D.W. Baker & F. Zignani. (1989) Boron doping and hydrogenation by ion implantation of a-Si:H. Journal of Non-Crystalline Solids 114, pages 271-273.
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Ruud E. I. Schropp. (1989) Improved material properties of amorphous silicon from silane by fluorine implantation: Application to thin-film transistors. Journal of Applied Physics 65:9, pages 3706-3711.
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R. Galloni, Y.S. Tsuo & F. Zignani. (1989) Ion implantation and hydrogen passivation in amorphous silicon films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39:1-4, pages 386-388.
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A. Yoshida, K. Setsune & T. Hirao. (1987) Phosphorus doping for hydrogenated amorphous silicon films by a low-energy ion doping technique. Applied Physics Letters 51:4, pages 253-255.
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R.E.I. Schropp, J.W.C. Veltkamp, J. Snijder & J.F. Verwey. (1985) On the quality of contacts in a-Si:H staggered electrode thin-film transistors. IEEE Transactions on Electron Devices 32:9, pages 1757-1760.
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W. Beyer & H. Overhof. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 257 307 .
Walter E. Spear & Peter G. LeComber. 1984. The Physics of Hydrogenated Amorphous Silicon I. The Physics of Hydrogenated Amorphous Silicon I 63 118 .
P. Siffert. 1982. Fourth E.C. Photovoltaic Solar Energy Conference. Fourth E.C. Photovoltaic Solar Energy Conference 901 918 .
L. F. Curtiss. (1928) Improved Form of Gas Type X-Ray Tube*. Journal of the Optical Society of America 16:1, pages 68.
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