Citations (41)
Keep up to date with the latest research on this topic with citation updates for this article.
Read on this site (3)
V. Drchal & J. Málek. (1990) A structural model of hydrogenated amorphous silicon. Philosophical Magazine B 62:3, pages 271-287.
Read now
Read now
S.R. Elliott. (1989) The structure of amorphous hydrogenated silicon and its alloys: A review. Advances in Physics 38:1, pages 1-88.
Read now
Read now
K.F. Heidemann, M. Grüner & E. te Kaat. (1984) Optical characterization of damage and concentration profiles in H ion implanted amorphous silicon. Radiation Effects 82:1-2, pages 103-131.
Read now
Read now
Articles from other publishers (38)
Brenda J. Knauber, Mohammad Ali Eslamisaray & J. Kakalios. (2021) Conductance fluctuations in hydrogenated amorphous germanium. Journal of Applied Physics 130:10.
Crossref
Crossref
Enrique Guerrero & David A. Strubbe. (2020)
Computational generation of voids in
-Si and
-Si:H by cavitation at low density
. Physical Review Materials 4:2.
Crossref
Crossref
Hiroyuki Fujiwara. 2018. Spectroscopic Ellipsometry for Photovoltaics. Spectroscopic Ellipsometry for Photovoltaics
227
252
.
I. Chambouleyron, D. Comedi & G.K. Sujan. 2016. Reference Module in Materials Science and Materials Engineering. Reference Module in Materials Science and Materials Engineering.
Parthapratim Biswas, D. A. Drabold & Raymond Atta-Fynn. (2014)
Microstructure from joint analysis of experimental data and
ab initio
interactions: Hydrogenated amorphous silicon
. Journal of Applied Physics 116:24.
Crossref
Crossref
Robert A. Street & K. Winer. 2006. Materials Science and Technology. Materials Science and Technology.
Shota Kageyama, Masataka Akagawa & Hiroyuki Fujiwara. (2011)
Dielectric function of
-Si:H based on local network structures
. Physical Review B 83:19.
Crossref
Crossref
K. Jarolimek, R. A. de Groot, G. A. de Wijs & M. Zeman. (2009) First-principles study of hydrogenated amorphous silicon. Physical Review B 79:15.
Crossref
Crossref
P. Roura, J. Farjas & P. Roca i Cabarrocas. (2008) Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon. Journal of Applied Physics 104:7.
Crossref
Crossref
Adrian C Wright, Alex C Hannon, Roger N Sinclair, Thierry M Brunier, Carlo A Guy, Roger J Stewart, Matthias B Strobel & Frank Jansen. (2007) Neutron scattering studies of hydrogenated, deuterated and fluorinated amorphous silicon. Journal of Physics: Condensed Matter 19:41, pages 415109.
Crossref
Crossref
Philip H. Gaskell. 2006. Materials Science and Technology. Materials Science and Technology.
Sukti Hazra, Isao Sakata, Mitsuyuki Yamanaka & Eiichi Suzuki. (2004) Evolution of an amorphous silicon network from silicon paracrystallites studied by spectroscopic ellipsometry. Physical Review B 69:23.
Crossref
Crossref
Saravanapriyan Sriraman, Eray S. Aydil & Dimitrios Maroudas. (2004) Growth and characterization of hydrogenated amorphous silicon thin films from SiH2 radical precursor: Atomic-scale analysis. Journal of Applied Physics 95:4, pages 1792-1805.
Crossref
Crossref
Saravanapriyan Sriraman, Eray S. Aydil & Dimitrios Maroudas. (2002)
Atomic-scale analysis of deposition and characterization of
a
-Si:H thin films grown from SiH radical precursor
. Journal of Applied Physics 92:2, pages 842-852.
Crossref
Crossref
P. M. Voyles, N. Zotov, S. M. Nakhmanson, D. A. Drabold, J. M. Gibson, M. M. J. Treacy & P. Keblinski. (2001) Structure and physical properties of paracrystalline atomistic models of amorphous silicon. Journal of Applied Physics 90:9, pages 4437-4451.
Crossref
Crossref
I. Chambouleyron & D. Comedi. 2001. Encyclopedia of Materials: Science and Technology. Encyclopedia of Materials: Science and Technology
289
298
.
R. A. Street & K. Winer. 2000. Handbook of Semiconductor Technology Set. Handbook of Semiconductor Technology Set
541
595
.
R. A. Street & K. Winer. 2000. Handbook of Semiconductor Technology. Handbook of Semiconductor Technology
541
595
.
Ch. Bellin, P. Roca i Cabarrocas, K. Zellama, M.L. Thèye & G. Loupias. (1997) Compton profiles of amorphous and hydrogenated amorphous silicon. Solid State Communications 104:4, pages 193-197.
Crossref
Crossref
Blair Tuttle & James B. Adams. (1997) Structure, dissociation, and the vibrational signatures of hydrogen clusters in amorphous silicon. Physical Review B 56:8, pages 4565-4572.
Crossref
Crossref
A. H. Mahan, D. L. Williamson & T. E. Furtak. (2011) Observation of Improved Structural Ordering in Low H Content, Hot wire Deposited a-Si:H. MRS Proceedings 467.
Crossref
Crossref
Zhizhong Chen, Kai Yang, Rong Zhang, Hongtao Shi & Youdou Zheng. (2011)
Optical and Structural Properties of α-Si
1-x
C
x
Films
. MRS Proceedings 423.
Crossref
Crossref
Qiming Li & R. Biswas. (1995)
Hydrogen rebonding and defect formation in
a
-Si:H
. Physical Review B 52:15, pages 10705-10708.
Crossref
Crossref
C. Meneghini, F. Boscherini, F. Evangelisti & S. Mobilio. (1994)
Structure of
a
-
:H alloys by wide-angle x-ray scattering: Detailed determination of first- and second-shell environment for Si and C atoms
. Physical Review B 50:16, pages 11535-11545.
Crossref
Crossref
M. Wakagi, K. Ogata & A. Nakano. (1994)
Structural study of
a
-Si and
a
-Si:H films by EXAFS and Raman-scattering spectroscopy
. Physical Review B 50:15, pages 10666-10671.
Crossref
Crossref
J. M. Holender, G. J. Morgan & R. Jones. (1993) Model of hydrogenated amorphous silicon and its electronic structure. Physical Review B 47:7, pages 3991-3994.
Crossref
Crossref
Eugen Tarnow & R. A. Street. (1992) Bonding of hydrogen to weak Si-Si bonds. Physical Review B 45:7, pages 3366-3371.
Crossref
Crossref
F. Boscherini. (2011) Structural Studies of Amorphous Semiconductor Alloys Using X-Ray Absorption and Related Techniques. MRS Proceedings 258.
Crossref
Crossref
A. Filipponi, A. Di Cicco, T.A. Tyson & C.R. Natoli. (1991) “Ab-initio” modelling of x-ray absorption spectra. Solid State Communications 78:4, pages 265-268.
Crossref
Crossref
C. Meneghini, S. Pascarelli, F. Boscherini, S. Mobilio & F. Evangelisti. (1991) Structural study of a-Si1-xCx:H by exafs and x-ray scattering. Journal of Non-Crystalline Solids 137-138, pages 75-78.
Crossref
Crossref
A. Filipponi, A. Di Cicco, M. Benfatto & C.R. Natoli. (1989) X-ray absorption spectroscopy on amorphous silicon: A probe for the three-body correlation-function. Journal of Non-Crystalline Solids 114, pages 229-231.
Crossref
Crossref
A. Filipponi, F. Evangelisti, M. Benfatto, S. Mobilio & C. R. Natoli. (1989)
Structural investigation of
a
-Si and
a
-Si:H using x-ray-absorption spectroscopy at the Si
K
edge
. Physical Review B 40:14, pages 9636-9643.
Crossref
Crossref
A. Di Cicco, A. Bianconi & N.V. Pavel. (1987) Spherical wave exafs analysis of the silicon K-edge X-ray absorption spectrum. Solid State Communications 61:10, pages 635-639.
Crossref
Crossref
Rodica Manaila & Dan Macovei. (1987) Exafs in amorphous materials. Journal of Non-Crystalline Solids 90:1-3, pages 383-392.
Crossref
Crossref
P. Danesh, S. Simov, N. Pashov, M. Kalitzova, P. Bonhomme & G. Balossier. (1986) Structural study of glow discharge a ? Si ? H films. Applied Physics A Solids and Surfaces 39:4, pages 297-299.
Crossref
Crossref
C. E. Bouldin, E. A. Stern, B. von Roedern & J. Azoulay. (1984)
Structural study of hydrogenated
-Ge using extended x-ray absorption fine structure
. Physical Review B 30:8, pages 4462-4469.
Crossref
Crossref
R. Bellissent, A. Chenevas-Paule, P. Lagarde, D. Bazin & D. Raoux. (1983) Short-range order investigation in a-Si:H by EXAFS. Journal of Non-Crystalline Solids 59-60, pages 237-240.
Crossref
Crossref
P. John, I.M. Odeh & M.J.K. Thomas. (1982) A reassessment of the vibrational spectrum of hydrogenated amorphous silicon. Solid State Communications 41:4, pages 341-344.
Crossref
Crossref