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Philosophical Magazine B Volume 44, 1981 - Issue 2
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Correspondence

The Hall mobility in amorphous semiconductors in the presence of long-range potential fluctuations

H. Overhof Universität Paderborn, Fachbereich 6, D-4790, Paderborn, F.R. Germany
Pages 317-322 | Received 17 Dec 1980, Accepted 02 Mar 1981, Published online: 20 Aug 2006

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Pravin Kumar Singh & D. K. Dwivedi. (2017) Chalcogenide glass: Fabrication techniques, properties and applications. Ferroelectrics 520:1, pages 256-273.
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H. Overhof & W. Beyer. (1984) On the transport mechanism in chalcogenide glasses. Philosophical Magazine B 49:1, pages L9-L14.
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Articles from other publishers (26)

Dan Shan, Daoyuan Sun, Menglong Wang & Yunqing Cao. (2023) Investigation of the Electronic Properties of Silicon Carbide Films with Varied Si/C Ratios Annealed at Different Temperatures. Crystals 14:1, pages 45.
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Hideharu Matsuura, Yuki Kondo, Kosuke Iida, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida & Hajime Okumura. (2021) Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC. Japanese Journal of Applied Physics 60:3, pages 031008.
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F. Abdel-Wahab, A. Merazga & A. A. Montaser. (2016) Electrical Conductivity Mechanism in Unconventional Lead Vanadate Glasses. Journal of Low Temperature Physics 186:5-6, pages 372-384.
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Kazuo Morigaki, Sándor Kugler & Koichi Shimakawa. 2017. Amorphous Semiconductors. Amorphous Semiconductors 61 155 .
Kazuo Morigaki & Chisato Ogihara. 2017. Springer Handbook of Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials 1 1 .
I. Crupi, S. Mirabella, D. D’Angelo, S. Gibilisco, A. Grasso, S. Di Marco, F. Simone & A. Terrasi. (2010) Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition. Journal of Applied Physics 107:4.
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Sumita Mukhopadhyay, Romyani Goswami & Swati Ray. (2009) Transport and structural properties of silicon films in the amorphous-to-microcrystalline transition region. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27:3, pages 436-442.
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Koichi Shimakawa & Takashi Itoh. (2007) Grain Boundary Scattering of Free Electrons in Ga-Doped Microcrystalline Zinc Oxide Films. Japanese Journal of Applied Physics 46:6L, pages L577.
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Kazuo Morigaki & Chisato Ogihara. 2007. Springer Handbook of Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials 565 580 .
K. Shimakawa, K. Ando & T. Aoki. (2004) Photoconductivity of a-Si:H and a-Ge:H: influence of potential fluctuations. Journal of Non-Crystalline Solids 338-340, pages 314-317.
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. 2003. Advances in Amorphous Semiconductors. Advances in Amorphous Semiconductors 245 276 .
. 2003. Advances in Amorphous Semiconductors. Advances in Amorphous Semiconductors 203 244 .
K. Shimakawa & Ashtosh Ganjoo. (2002) ac photoconductivity of hydrogenated amorphous silicon: Influence of long-range potential fluctuations. Physical Review B 65:16.
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K Shimakawa & Ashtosh Ganjoo. (2002) Photoconductivity of macroscopically inhomogeneous amorphous semiconductors: case example for a-Si:H. Journal of Non-Crystalline Solids 299-302, pages 339-345.
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H. Overhof & M. Schmidtke. (2000) Effect of long-range random potentials on the electronic transport properties of disordered semiconductors: A numerical study. Physical Review B 61:19, pages 12977-12981.
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K. Shimakawa, A. Kondo, M. Goto & A.R. Long. (1996) AC loss originating from mesoscopic and macroscopic inhomogeneities in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids 198-200, pages 157-160.
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R. Murri, N. Pinto & L. Schiavulli. (1993) Electronic-transport properties of unhydrogenated amorphous gallium arsenide. Il Nuovo Cimento D 15:5, pages 785-792.
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N. Du, Y. T. Zhu, B. Y. Tong & S. K. Wong. (1990) Observation of normal Hall coefficient of amorphous Si thin films prepared by low-pressure chemical-vapor deposition. Physical Review B 41:2, pages 1251-1253.
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N. Du, Y.T. Zhu, B.Y. Tong, P.K. John, S.K. Wong & K.P. Chik. (1989) Normal Hall coefficient of LPCVD amorphous silicon. Journal of Non-Crystalline Solids 114, pages 369-371.
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Harald Overhof & Peter ThomasHarald Overhof & Peter Thomas. 1989. Electronic Transport in Hydrogenated Amorphous Semiconductors. Electronic Transport in Hydrogenated Amorphous Semiconductors 108 121 .
Vincenzo Augelli, Roberto Murri & Teresa Ligonzo. (1984) Hall mobility in doped Si:H, Cl films. Thin Solid Films 116:4, pages 311-315.
Crossref
W. Beyer & H. Overhof. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 257 307 .
J. Dresner. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 193 205 .
Vincenzo Augelli, Roberto Murri, Nicola Alba & Teresa Ligonzo. (1983) Hall mobility in doped and undoped amorphous Si:H,Cl films. Journal of Non-Crystalline Solids 59-60, pages 481-484.
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J. Dresner. (1983) Hall effect and hole transport in B-doped a-Si:H. Journal of Non-Crystalline Solids 58:2-3, pages 353-357.
Crossref
M. H. Brodsky. 1985. Amorphous Semiconductors. Amorphous Semiconductors 331 343 .

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