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Philosophical Magazine B Volume 47, 1983 - Issue 1
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Original Articles

Excitation-energy dependence of the photoluminescence total-light decay in arsenic chalcogenides

G. S. Higashi Department of Physics and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, U.S.A.
&
M. A. Kastner Department of Physics and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, U.S.A.
Pages 83-98 | Received 15 Jan 1982, Accepted 17 Jun 1982, Published online: 20 Aug 2006

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Michael Greben, Petro Khoroshyy, Ilya Sychugov & Jan Valenta. (2019) Non-exponential decay kinetics: correct assessment and description illustrated by slow luminescence of Si nanostructures. Applied Spectroscopy Reviews 54:9, pages 758-801.
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K. Luterová, I. Pelant, P. Fojtík, M. Nikl, I. Gregora, J. Kočka, J. Dian, J. Valenta, P. Malý, J. Kudrna, J. Štěpánek, A. Poruba & P. Horváth. (2000) Visible photoluminescence and electroluminescence in wide-bandgap hydrogenated amorphous silicon. Philosophical Magazine B 80:10, pages 1811-1832.
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J. Ristein & G. Weiser. (1987) Thermalization of excited carriers through band states studied by photoluminescence in As2Se3 and Se single crystals. Philosophical Magazine B 56:1, pages 51-62.
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J. Ristein & G. Weiser. (1986) Recombination of geminate pairs in As2Se3 single crystals. Philosophical Magazine B 54:6, pages 533-542.
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BernardA. Weinstein. (1984) Anomalous pressure response of luminescence in c-As2S3 and a-As2SeS2 Consequences for defect structure in chalcogenides. Philosophical Magazine B 50:6, pages 709-729.
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L.H. Robins & M.A. Kastner. (1984) Recombination and excited-state absorption at photoluminescence centres in crystalline and amorphous arsenic triselenide. Philosophical Magazine B 50:1, pages 29-51.
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K. Murayama, G.S. Higashi & M.A. Kastner. (1983) Time-resolved measurements of photoluminescence in As—S alloy glasses and films evaporated from a-As2S3 . Philosophical Magazine B 48:3, pages 277-288.
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J. Valenta, M. Greben, Z. Remeš, S. Gutsch, D. Hiller & M. Zacharias. (2016) Determination of absorption cross-section of Si nanocrystals by two independent methods based on either absorption or luminescence. Applied Physics Letters 108:2.
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Keiji Tanaka. (2013) Excitation‐energy‐dependent photoluminescence in glassy As–S and crystalline As 2 S 3 . physica status solidi (b) 250:5, pages 988-993.
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A. M. Hartel, S. Gutsch, D. Hiller & M. Zacharias. (2013) Intrinsic nonradiative recombination in ensembles of silicon nanocrystals. Physical Review B 87:3.
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Hidetoshi Oheda. (2007) Two characteristic photoluminescence states and their metastability in hydrogenated amorphous silicon and its alloys. Journal of Applied Physics 101:5.
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K. V. Adarsh, K. S. Sangunni, S. Kokenyesi, I. Ivan & M. Shipljak. (2005) Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayered a-Se∕As2S3 films. Journal of Applied Physics 97:4.
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M. Niehus, S. Koynov, R. Schwarz, N.A. Feoktistov, V.G. Golubev, D.A. Kurdyukov & A.B. Pevtsov. (2011) Non-Stationary Photoconductivity of GaN Nanocomposites In Artificial Opal Matrix. MRS Proceedings 639.
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W.E. Spear. (1987) The investigation of transport properties in a-si by fast transient techniques. Journal of Non-Crystalline Solids 90:1-3, pages 171-178.
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