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Original Articles

The transient photodecay process and its interpretation in the case of disordered single crystals of arsenic triselenide

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Pages 997-1004 | Received 03 Apr 1985, Accepted 01 Jul 1985, Published online: 27 Sep 2006

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J.M. Marshall. (2000) The interpretation of pulsed-excitation transient photoconductivity in disordered semiconductors. Philosophical Magazine B 80:9, pages 1705-1726.
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Articles from other publishers (5)

J.M. Marshall & A.S. Walters. (1999) Localised states in CVD diamond, explored by transient photoconductivity and residual field measurements. Diamond and Related Materials 8:12, pages 2118-2126.
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J Rybicki, A Rybicka, S Feliziani, G Mancini & M Chybicki. (1995) A Monte Carlo simulation of the time-of-flight experiment in non-uniformly defected thin crystalline layers. Journal of Physics: Condensed Matter 7:15, pages 2987-2999.
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J Rybicki, A Rybicka, G Mancini, S Feliziani & M Chybicki. (1993) A Monte Carlo study of r- epsilon -hopping transient currents in thin dielectric layers with a macroscopically inhomogeneous spatial distribution of hopping centres. Journal of Physics: Condensed Matter 5:28, pages 5027-5036.
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G. F. Seynhaeve, R. P. Barclay, G. J. Adriaenssens & J. M. Marshall. (1989) Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous silicon. Physical Review B 39:14, pages 10196-10205.
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R. P. Barclay, G. Seynhaeve, G. J. Adriaenssens & J. M. Marshall. (2011) Investigation of Time of Flight Photocurrents in a-Si:H. MRS Proceedings 118.
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