Advanced search
Publication Cover
Philosophical Magazine B Volume 63, 1991 - Issue 1
Journal homepage
51
Views
41
CrossRef citations to date
0
Altmetric
Original Articles

A defect-pool model for near-interface states in amorphous silicon thin-film transistors

M. J. Powell Philips Research Laboratories, Redhill, Surrey, England
,
S. C. Deane Philips Research Laboratories, Redhill, Surrey, England; Engineering Department, University of Cambridge, England
,
I. D. French Philips Research Laboratories, Redhill, Surrey, England
,
J. R. Hughes Philips Research Laboratories, Redhill, Surrey, England
&
W. I. Milne Engineering Department, University of Cambridge, Cambridge, England
Pages 325-336 | Received 11 Jun 1990, Accepted 18 Jun 1990, Published online: 20 Aug 2006

Citations (41)

Keep up to date with the latest research on this topic with citation updates for this article.

Subscribe to citation updates

Read on this site (1)

B. Ruttensperger, G. MÜLler & G. KrÖTz. (1993) Density-of-state distribution and variable-range hopping transport in amorphous silicon prepared by ion bombardment. Philosophical Magazine B 68:2, pages 203-214.
Read now

Articles from other publishers (40)

Piero Migliorato & Abu Zayed Mohammad Saliqur Rahman. 2017. Reference Module in Materials Science and Materials Engineering. Reference Module in Materials Science and Materials Engineering.
Roger Häusermann, Kristin Willa, Balthasar Blülle, Tobias Morf, Antonio Facchetti, Zhihua Chen, Jiyoul Lee & Bertram Batlogg. (2016) Device performance and density of trap states of organic and inorganic field-effect transistors. Organic Electronics 28, pages 306-313.
Crossref
Karim Karim. 2009. Medical Imaging. Medical Imaging 23 58 .
Jae Hwan Oh, Se Hwan Kim, Jae Won Choi, Dong Han Kang, Eun Young Lee, Ji Ho Hur & Jin Jang. (2006) P-22: Bottom-Gate Poly-Si TFTs for AMOLED Backplane. SID Symposium Digest of Technical Papers 37:1, pages 262.
Crossref
Arokia Nathan & Karim S. Karim. 2006. MEMS. MEMS 281 343 .
Arokia Nathan & Karim S. Karim. 2006. MEMS: A Practical Guide to Design, Analysis, and Applications. MEMS: A Practical Guide to Design, Analysis, and Applications 281 343 .
Arokia Nathan, Peyman Servati, Karim S. Karim, Denis Striakhilev & Andrei Sazonov. 2004. Thin Film Transistors. Thin Film Transistors 79 181 .
P. Migliorato. 2001. Encyclopedia of Materials: Science and Technology. Encyclopedia of Materials: Science and Technology 299 304 .
B Stannowski, A.M Brockhoff, A Nascetti & R.E.I Schropp. (2000) Metastability of hot-wire amorphous-silicon thin-film transistors. Journal of Non-Crystalline Solids 266-269, pages 464-468.
Crossref
B. Stannowski, R. E. I. Schropp & A. Nascetti. (1999) High energy-barrier for defect creation in thin-film transistors based on hot-wire amorphous silicon. Applied Physics Letters 75:23, pages 3674-3676.
Crossref
B. Stannowski, H. Meiling, A. M. Brockhoff & R. E. I. Schropp. (2011) Thin-Film Transistors based on Hot-Wire Amorphous Silicon on Silicon Nitride. MRS Proceedings 557.
Crossref
Norbert H. Nickel. 1999. 83 163 .
P. Mei, J. B. Boyce, D. K. Fork, G. Anderson, J. Ho, J. Lu, M. Hack & R. Lujan. (2011) Hybrid Amorphous and Polycrystalline Silicon Devices For Large-Area Electronics. MRS Proceedings 507.
Crossref
S.M. GadelRab & S.G. Chamberlain. (1998) Improvement of the reliability of amorphous silicon transistors by conduction-band tail width reduction. IEEE Transactions on Electron Devices 45:10, pages 2179-2186.
Crossref
H. Ichinose, Y. Ishizuka, H. Nozaki, A. Furukawa, H. Tango & O. Yoshida. (1996) The bias-annealing effect on a-Si:H photodiode. Journal of Non-Crystalline Solids 198-200, pages 322-325.
Crossref
P.S. Gudem & S.G. Chamberlain. (1995) A realistic trap distribution model for numerical simulation of amorphous silicon thin-film transistors and phototransistors. IEEE Transactions on Electron Devices 42:7, pages 1333-1339.
Crossref
P. Mei, J.B. Boyce, D.K. Fork, M. Hack, R. Lujan & S.E. Ready. (1995) Poly-Si peripheral circuits and contact properties of laser processed poly-Si thin film transistors. Poly-Si peripheral circuits and contact properties of laser processed poly-Si thin film transistors.
C.M. Fortmann. 1995. Plasma Deposition of Amorphous Silicon-Based Materials. Plasma Deposition of Amorphous Silicon-Based Materials 131 176 .
Zhong Chen & Wenyuan Xu. (1994) Studies of defect states in the interface between SiO2 and a-Si:H films. Thin Solid Films 251:2, pages 96-98.
Crossref
P. Mei, J. B. Boyce, M. Hack, R. Lujan, S. E. Ready, D. K. Fork, R. I. Johnson & G. B. Anderson. (1994) Grain growth in laser dehydrogenated and crystallized polycrystalline silicon for thin film transistors. Journal of Applied Physics 76:5, pages 3194-3199.
Crossref
P. Mei, G. B. Anderson, J. B. Boyce, D. K. Fork, M. Hack, R. I. Johnson, R. A. Lujan & S. E. Ready. (2011) Considerations for Large Area Fabrication Of Integrated a-Si and Poly-Si TFTs. MRS Proceedings 345.
Crossref
P. Mei, G. B. Anderson, J. B. Boyce, D. K. Fork, M. Hack, R. I. Johnson, R. A. Lujan & S. E. Ready. (2011) Considerations for Large Area Fabrication of Integrated a-Si and Poly-Si TFTs. MRS Proceedings 336.
Crossref
S.C. Deane & M.J. Powell. (2011) Understanding of Thin Film Transistor Electrical Measurements in the Light of the Defect Pool Model. MRS Proceedings 336.
Crossref
V. Suntharalingam, C.M. Fortmann, S.J. Fonash & F.A. Rubinelli. (1994) The p/i interface layer in amorphous silicon solar cells: a numerical modeling study. The p/i interface layer in amorphous silicon solar cells: a numerical modeling study.
S. C. Deane & M. J. Powell. (1993) Field-effect conductance in amorphous silicon thin-film transistors with a defect pool density of states. Journal of Applied Physics 74:11, pages 6655-6666.
Crossref
S.C. Deane & M.J. Powell. (1993) Defect-pool model parameters for amorphous silicon derived from field-effect measurements. Journal of Non-Crystalline Solids 164-166, pages 323-326.
Crossref
S. C. Deane, F. J. Clough, W. I. Milne & M. J. Powell. (1993) The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics. Journal of Applied Physics 73:6, pages 2895-2901.
Crossref
M. J. Powell, C. van Berkel, A. R. Franklin, S. C. Deane & W. I. Milne. (1992) Defect pool in amorphous-silicon thin-film transistors. Physical Review B 45:8, pages 4160-4170.
Crossref
K. J. B. M. Nieuwesteeg, J. Boogaard, G. Oversluizen & M. J. Powell. (1992) Current-stress induced asymmetry in hydrogenated amorphous silicon n - i - n devices . Journal of Applied Physics 71:3, pages 1290-1297.
Crossref
M. J. Powell, S. C. Deane & W. I. Milne. (1992) Bias-stress-induced creation and removal of dangling-bond states in amorphous silicon thin-film transistors. Applied Physics Letters 60:2, pages 207-209.
Crossref
N. H. Nickel, W. Fuhs, H. Mell & W. Beyer. (2011) Silicon-Nitride for Amorphous Silicon Thin-Film Transistors. MRS Proceedings 284.
Crossref
G. Fortunato & L. Mariucci. (2011) Instability in Amorphous Silicon Dioxide/Amorphous Silicon Structures. MRS Proceedings 284.
Crossref
S. S. He, D. J. Stephens, R. W. Hamaker & G. Lucovsky. (2011) Channel Layer Surface Modifications in a-Si:II thin Film Transistors With Oxide/Nitride Dielectric Layers. MRS Proceedings 282.
Crossref
P. Foglietti, G. Fortunato, L. Mariucci & V. Parisi. (2011) Instability in a-Si:H Thin-Film Transistor: A New Method to Discriminate Between Charge Injection and Defect Creation. MRS Proceedings 258.
Crossref
T. Globus, M. Shur & M. Hack. (2011) Studies of the Stability of Amorphous Silicon Thin Film Transistors. MRS Proceedings 258.
Crossref
G. M�ller & G. Kr�tz. (1992) Defects and impurities in amorphous semiconductors and in liquid electrolytes. Applied Physics A Solids and Surfaces 54:1, pages 40-46.
Crossref
J. Kanicki, C. Godet & A. V. Gelatos. (2011) Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures. MRS Proceedings 219.
Crossref
S. C. Deane, W. I. Milne & M. J. Powell. (2011) Reduction of Threshold Voltage Shift by Bias Annealing of Hydrogenated Amorphous Silicon Thin Film Transistors. MRS Proceedings 219.
Crossref
N. Nickel, W. Fuhs & H. Mell. (1991) TCS study of n- and p-channel amorphous silicon thin-film transistors. Journal of Non-Crystalline Solids 137-138, pages 1221-1224.
Crossref
M.J. Powell, C Van Berkel & S.C. Deane. (1991) Instability mechanisms in amorphous silicon thin film transistors and the role of the defect pool. Journal of Non-Crystalline Solids 137-138, pages 1215-1220.
Crossref

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.