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Philosophical Magazine B Volume 69, 1994 - Issue 2
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Original Articles

Reversible and irreversible structural changes in amorphous silicon

G. Müller Deutsche Aerospace AG, Postfach 80 11 09, 81633, München, Germany
,
G. Krötz Deutsche Aerospace AG, Postfach 80 11 09, 81633, München, Germany
,
S. Kalbitzer Max-Planck-Institut für Kernphysik, Postfach 10 39 80, 69029, Heidelberg, Germany
&
G. N. Greaves Daresbury Laboratory, Science and Engineering Research Council, Warrington, WA4 4AD, England
Pages 177-196 | Received 03 Jun 1993, Accepted 23 Aug 1993, Published online: 27 Sep 2006

Citations (12)

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G. Müller, W. Hellmich, G. Krötz, S. Kalbitzer, G. N. Greaves, G. Derst, A. J. Dent & B. R. Dobson. (1996) Dopant‐defect interactions in hydrogen‐free amorphous silicon. Philosophical Magazine B 73:2, pages 245-259.
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Articles from other publishers (11)

S. Mirabella, D. De Salvador, E. Napolitani, E. Bruno & F. Priolo. (2013) Mechanisms of boron diffusion in silicon and germanium. Journal of Applied Physics 113:3.
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G. T. Barkema, Normand Mousseau, R.L.C. Vink & Parthapratim Biswas. (2011) Basic mechanisms of structural relaxation and diffusion in amorphous silicon. MRS Proceedings 664.
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A. Csik, G. A. Langer, D. L. Beke, Z. Erdélyi, M. Menyhard & A. Sulyok. (2001) Interdiffusion in amorphous Si/Ge multilayers by Auger depth profiling technique. Journal of Applied Physics 89:1, pages 804-806.
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Normand Mousseau & G. T. Barkema. (2000) Activated mechanisms in amorphous silicon: An activation-relaxation-technique study. Physical Review B 61:3, pages 1898-1906.
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J. Solis, M. C. Morilla & C. N. Afonso. (1998) Laser-induced structural relaxation and crystallization phenomena in the picosecond time scale in GeSbO thin films. Journal of Applied Physics 84:10, pages 5543-5546.
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G. T. Barkema & Normand Mousseau. (1998) Identification of Relaxation and Diffusion Mechanisms in Amorphous Silicon. Physical Review Letters 81:9, pages 1865-1868.
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Gerhard Müller. (1998) Amorphisation processes in silicon. Current Opinion in Solid State and Materials Science 3:4, pages 364-370.
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G.N. Greaves, A.J. Dent, G. Derst, S. Kalbitzer & G. Müller. (2014) Studying the Environments of Ion‐Implanted Arsenic Defects in Amorphous and Recrystallised Silicon with Impurity EXAFS. Berichte der Bunsengesellschaft für physikalische Chemie 101:9, pages 1258-1264.
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G. Mütter, S. Kalbitzer & G.N. Greaves. 1997. Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physicochemical Characterization. Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physicochemical Characterization 85 127 .
Sigurd Wagner, Helena Gleskova & Jun-ichi Nakata. (1996) Equilibration and stability in undoped amorphous silicon. Journal of Non-Crystalline Solids 198-200, pages 407-414.
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J. Nakata, S. Wagner, H. Gleskova, P. A. Stolk & J. M. Poate. (2011) Recovery Kinetics of Phosphorus Ion-Implanted a-Si:H. MRS Proceedings 420.
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