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Original Articles

Metal-mediated crystallization of amorphous silicon in silicon-silver layered systems

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Pages 163-178 | Received 04 May 1994, Accepted 24 Jun 1994, Published online: 27 Sep 2006

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AmandaK. Petford-long, R.C. Doole & C.N. Afonso. (1996) Kinetics of grain-boundary reactions at semimetal-semiconductor interfaces observed during in-situ transmission electron microscope annealing. Philosophical Magazine A 74:4, pages 907-918.
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Serhii Dukarov, Serhii Petrushenko, Sergiy Bogatyrenko & Vladimir SukhovSerhii Dukarov, Serhii Petrushenko, Sergiy Bogatyrenko & Vladimir Sukhov. 2024. Formation and Temperature Stability of the Liquid Phase in Thin-Film Systems. Formation and Temperature Stability of the Liquid Phase in Thin-Film Systems 49 94 .
Andres Conca, Elías Ferreiro-Vila, Alfonso Cebollada & Marisol Martin-Gonzalez. (2023) Sputtering Codeposition and Metal-Induced Crystallization to Enhance the Power Factor of Nanocrystalline Silicon. ACS Applied Electronic Materials.
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F. Triendl, G. Pfusterschmied, S. Schwarz, W. Artner & U. Schmid. (2021) Si/4H–SiC heterostructure formation using metal-induced crystallization. Materials Science in Semiconductor Processing 128, pages 105763.
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Dmytro Svyetlichnyy & Aleksandr Kryshtal. (2020) Lattice Boltzmann simulation of metal-induced crystallization of amorphous semiconductor films. Applied Surface Science 515, pages 146090.
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Aleksandr Kryshtal, Alexey Minenkov, Sergey Bogatyrenko & Adam Gruszczyński. (2019) Melting process and the size depression of the eutectic temperature in Ag/Ge and Ge/Ag/Ge layered films. Journal of Alloys and Compounds 786, pages 817-825.
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Frances M. Ross & Andrew M. Minor. 2019. Springer Handbook of Microscopy. Springer Handbook of Microscopy 101 187 .
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Aleksandr P. Kryshtal, Alexey A. Minenkov & Paulo J. Ferreira. (2017) Interfacial kinetics in nanosized Au/Ge films: An in situ TEM study. Applied Surface Science 409, pages 343-349.
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Jaime Andr?s P?rez?Taborda, Olga Caballero?Calero & Marisol Mart?n?Gonz?lez. 2017. New Research on Silicon - Structure, Properties, Technology. New Research on Silicon - Structure, Properties, Technology.
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Zumin Wang, Lars Jeurgens & Eric Mittemeijer. 2015. Metal-Induced Crystallization. Metal-Induced Crystallization 1 24 .
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Robert Sinclair. (2013) In situ high-resolution transmission electron microscopy of material reactions . MRS Bulletin 38:12, pages 1065-1071.
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Suk Jun Kim, Eric A. Stach & Carol A. Handwerker. (2012) Silver layer instability in a SnO2/Ag/SnO2 trilayer on silicon. Thin Solid Films 520:19, pages 6189-6195.
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José Ezequiel De Souza & Jean-Claude M’Peko. (2011) Linking origin of the electric field-assisted β-PbF2 crystallization in lead oxyfluoroborate glasses below T g to simultaneous cathode/anode-compensated electrochemical reactions. Journal of Solid State Electrochemistry 16:1, pages 191-196.
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Quanbao Li, Jian Wang, Zheng Jiao, Minghong Wu, Chan-Hung Shek, C.M. Lawrence Wu, Joseph K.L. Lai & Zhiwen Chen. (2011) Temperature-induced assembly of semiconductor nanocrystals into fractal architectures and thermoelectric power properties in Au/Ge bilayer films. Chaos, Solitons & Fractals 44:8, pages 640-646.
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Lars P. H. Jeurgens, Zumin Wang & Eric J. Mittemeijer. (2009) Thermodynamics of reactions and phase transformations at interfaces and surfaces. International Journal of Materials Research 100:10, pages 1281-1307.
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Chichang Zhang & Clayton W. BatesJr.Jr.. (2009) Metal-mediated crystallization in Si–Ag systems. Thin Solid Films 517:19, pages 5783-5785.
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C.W. BatesJr.Jr., J.C. White & C. Ekeocha. (2007) Transmission electron microscopy study of Ag/n-Si composites grown on Si (111) substrates. Materials Science and Engineering: B 143:1-3, pages 38-41.
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Ibrahima Diagne, Juan White, Mandoye Ndoye, Clayton W. BatesJr.Jr. & W. Robert Thurber. (2005) Chemical etch studies of Ag/n-Si metal–semiconductor composite films. Materials Letters 59:13, pages 1640-1643.
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Futoshi Katsuki, Kenji Hanafusa, Mitsuharu Yonemura, Toshiyuki Koyama & Minoru Doi. (2001) Crystallization of amorphous germanium in an Al/a-Ge bilayer film deposited on a SiO2 substrate. Journal of Applied Physics 89:8, pages 4643-4647.
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D. Babonneau, J. Briatico, F. Petroff, T. Cabioc’h & A. Naudon. (2000) Structural and magnetic properties of Fex–C1−x nanocomposite thin films. Journal of Applied Physics 87:7, pages 3432-3443.
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Hoo-Jeong Lee, Kee-Won Kwon, Changsup Ryu & Robert Sinclair. (1999) Thermal stability of a Cu/Ta multilayer: an intriguing interfacial reaction. Acta Materialia 47:15-16, pages 3965-3975.
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A.K Petford-Long, N Wilson, R.C Doole, R Serna & C.N Afonso. (1999) Crystallisation of thin Bi/Ge films: role of Bi crystal size. Journal of Magnetism and Magnetic Materials 198-199, pages 749-751.
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B Sundaravel, Amal K Das, S.K Ghose, K Sekar & B.N Dev. (1999) Epitaxial growth of silver on Br-passivated Si(111) substrates under high vacuum. Applied Surface Science 137:1-4, pages 11-19.
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N. Wilson, A. K. Petford-Long, R. C. Doole, R. Serna & C. N. Afonso. (1998) The role of size effects on the crystallization of amorphous Ge in contact with Bi nanocrystals. Journal of Applied Physics 84:9, pages 5283-5290.
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F. Edelman, R. Brener, C. Cytermann, R. Weil, C. Beneking, W. Beyer, W. Skorupa, R. Yankov & P. Werner. (2011) Al/ZnO/a-SiGe:H: A System Protected by the ZnO Buffer from Metal-Induced Crystallization. MRS Proceedings 467.
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Robert Sinclair. (2020) In situ Electron Microscopy and its applications to semiconductor reactions at high-resolution. Proceedings, annual meeting, Electron Microscopy Society of America 53, pages 222-223.
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