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Original Articles

Effect of the recombination function on the collection in a p—i—n solar cell

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Pages 589-599 | Received 15 Feb 1995, Accepted 11 Apr 1995, Published online: 27 Sep 2006

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A. Johansson, R. Gottschalg & D.G. Infield. (2004) Effect of shading on amorphous silicon single and double junction photovoltaic modules. International Journal of Ambient Energy 25:2, pages 65-72.
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R. Gottschalg, D.G. Infield & M.J. Kearney. (1998) Parametrisation of thin film solar cells. International Journal of Ambient Energy 19:3, pages 135-142.
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A. Shah, E. Sauvajn, J. Hubin, P. Pipoz & C. Hof. (1997) Free carrier ambipolar diffusion length in amorphous semiconductors. Philosophical Magazine B 75:6, pages 925-936.
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Aniruddha Singh Kushwaha, Pramila Mahala & Chenna Dhanavantri. (2014) Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach. International Journal of Photoenergy 2014, pages 1-6.
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C. Voz, J. Puigdollers, J.M. Asensi, S. Galindo, S. Cheylan, R. Pacios, P. Ortega & R. Alcubilla. (2013) Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells: relation to the charge carrier collection efficiency. Organic Electronics 14:6, pages 1643-1648.
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A.V. Shah, F. Sculati-Meillaud, Z.J. Berényi, O.M. Ghahfarokhi & R. Kumar. (2011) Diagnostics of thin-film silicon solar cells and solar panels/modules with variable intensity measurements (VIM). Solar Energy Materials and Solar Cells 95:1, pages 398-403.
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Shih-Wei Feng, Chih-Ming Lai, Chien-Hsun Chen, Wen-Ching Sun & Li-Wei Tu. (2010) Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells. Journal of Applied Physics 108:9.
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Tsu-Tsung Andrew Li, Keith R. McIntosh & Andres Cuevas. (2008) Limitations of a simplified dangling bond recombination model for a-Si:H. Journal of Applied Physics 104:11.
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G. Munyeme, M. Zeman, R. E. I. Schropp & W. F. van der Weg. (2004) Performance analysis ofa-Si:H p–i–n solar cells with and without a buffer layer at the p/i interface. physica status solidi (c) 1:9, pages 2298-2303.
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. 2003. Advances in Amorphous Semiconductors. Advances in Amorphous Semiconductors 306 324 .
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J.M. Asensi, D. Soler, M. Fonrodona, J. Bertomeu & J. Andreu. (2002) Collection asymmetry in a drift-driven p–i–n solar cell. Journal of Non-Crystalline Solids 299-302, pages 1142-1146.
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A. Thilagam & J. Singh. (2001) Assessment of the influence of charged dangling bonds on the short circuit current in amorphous silicon solar cells. Journal of Non-Crystalline Solids 288:1-3, pages 66-72.
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J. M. Asensi, J. Merten, C. Voz & J. Andreu. (1999) Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells. Journal of Applied Physics 85:5, pages 2939-2951.
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P. Štulı́k & J. Singh. (1998) Calculation of collection efficiency for amorphous silicon solar cells. Journal of Non-Crystalline Solids 242:2-3, pages 115-121.
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P Štulı́k & J Singh. (1998) Optical modelling of tandem structure amorphous silicon solar cells. Journal of Non-Crystalline Solids 231:1-2, pages 120-124.
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P. Štulı́k & J. Singh. (1998) A simple method to simulate the influence of defects on the short circuit current in amorphous silicon solar cells. Journal of Non-Crystalline Solids 226:3, pages 299-303.
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J. Merten, J.M. Asensi, C. Voz, A.V. Shah, R. Platz & J. Andreu. (1998) Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules. IEEE Transactions on Electron Devices 45:2, pages 423-429.
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