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Philosophical Magazine B Volume 76, 1997 - Issue 2
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Original Articles

Effect of the starting amorphous structure on the solid-phase crystallization of silicon

T. Mohammed-brahim Groupe de Microélectronique et Visualisation, Unite de Recherche associée au CNRS 1648, Universite de Rennes I, Campus de Beaulieu, Batiment 11B, F-35042, Rennes, Cedex, France
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M. Sarret Groupe de Microélectronique et Visualisation, Unite de Recherche associée au CNRS 1648, Universite de Rennes I, Campus de Beaulieu, Batiment 11B, F-35042, Rennes, Cedex, France
,
D. Briand Groupe de Microélectronique et Visualisation, Unite de Recherche associée au CNRS 1648, Universite de Rennes I, Campus de Beaulieu, Batiment 11B, F-35042, Rennes, Cedex, France
,
K. Kis-sion Groupe de Microélectronique et Visualisation, Unite de Recherche associée au CNRS 1648, Universite de Rennes I, Campus de Beaulieu, Batiment 11B, F-35042, Rennes, Cedex, France
,
L. Haji Groupe de Microélectronique et Visualisation, Unite de Recherche associée au CNRS 1648, Universite de Rennes I, Campus de Beaulieu, Batiment 11B, F-35042, Rennes, Cedex, France
,
O. Bonnaud Groupe de Microélectronique et Visualisation, Unite de Recherche associée au CNRS 1648, Universite de Rennes I, Campus de Beaulieu, Batiment 11B, F-35042, Rennes, Cedex, France
,
D. Louër Laboratoire de Cristallochimie, Chimie du Solide et Inorganique Mole'culaire, Unite de Recherche associée au CNRS 1495, Université de Rennes I, Campus de Beaulieu, Bǎtiment 10, F-35042, Rennes, Cedex, France
&
A. Hadjaj Lpicm, Ecole Polytechnique, 91120, Palaiseau, France
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Pages 193-212 | Received 06 Jan 1997, Accepted 26 Feb 1997, Published online: 27 Sep 2006

Citations (15)

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A. Achiq, R. Rizk, R. Madelon, F. Gourbilleau & P. Voivenel. (1999) Effects of pre-hydrogenation on the relaxation and bandgap variation of thermally nanocrystallized silicon layers. Philosophical Magazine B 79:5, pages 777-791.
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Articles from other publishers (14)

F. Law, B. Hoex, J. Wang, J. Luther, K. Sharma, M. Creatore & M.C.M. Van de Sanden. (2012) Kinetic study of solid phase crystallisation of expanding thermal plasma deposited a-Si:H. Thin Solid Films 520:17, pages 5820-5825.
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J.F. Michaud, R. Rogel, T. Mohammed-Brahim & M. Sarret. (2006) Cw argon laser crystallization of silicon films: Structural properties. Journal of Non-Crystalline Solids 352:9-20, pages 998-1002.
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J.F. Michaud, R. Rogel, T. Mohammed-Brahim, M. Sarret & O. Bonnaud. (2005) Solid phase post-treatment of polysilicon films by a continuous argon laser. Thin Solid Films 487:1-2, pages 81-84.
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Olivier Bonnaud, Tayeb Mohammed-Brahim & Dieter G. Ast. 2004. Thin Film Transistors. Thin Film Transistors 533 618 .
H. Mahfoz-Kotb, A.C. Salaün, T. Mohammed-Brahim, F. Le Bihan & M. El-Marssi. (2003) Polycrystalline silicon thin films for MEMS applications. Thin Solid Films 427:1-2, pages 422-426.
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R. Rogel, G. Gautier, N. Coulon, M. Sarret & O. Bonnaud. (2003) Influence of precursors gases on LPCVD TFT's characteristics. Thin Solid Films 427:1-2, pages 108-112.
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G Farhi, M Aoucher & T Mohammed-Brahim. (2002) Study of the solid phase crystallization behavior of amorphous sputtered silicon by X-ray diffraction and electrical measurements. Solar Energy Materials and Solar Cells 72:1-4, pages 551-558.
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Hideya Kumomi & Frank G. Shi. 2002. Handbook of Thin Films. Handbook of Thin Films 319 373 .
L Pichon, K Mourgues, F Raoult, T Mohammed-Brahim, K Kis-Sion, D Briand & O Bonnaud. (2001) Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization. Semiconductor Science and Technology 16:11, pages 918-924.
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K Mourgues, A Rahal, T Mohammed-Brahim, M Sarret, J.P Kleider, C Longeaud, A Bachrouri & A Romano-Rodriguez. (2000) Density of states in the channel material of low temperature polycrystalline silicon thin film transistors. Journal of Non-Crystalline Solids 266-269, pages 1279-1283.
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P delli Veneri, C Privato & E Terzini. (2000) Changes of hydrogen evolution thermodynamics induced by He and H2 dilution in PECVD a-Si:H films: influence on thermal crystallization. Journal of Non-Crystalline Solids 266-269, pages 635-639.
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R Rogel, M Sarret, T Mohammed-Brahim, O Bonnaud & J.P Kleider. (2000) High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon. Journal of Non-Crystalline Solids 266-269, pages 141-145.
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T. Mohammed-Brahim, K. Kis-Sion, D. Briand, M. Sarret, O. Bonnaud, J.P. Kleider, C. Longeaud & B. Lambert. (1998) From amorphous to polycrystalline thin films: dependence on annealing time of structural and electronic properties. Journal of Non-Crystalline Solids 227-230, pages 962-966.
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M Aoucher, G Farhi & T Mohammed-Brahim. (1998) Crystallization of hydrogenated amorphous silicon deposited at high rate by dc magnetron sputtering. Journal of Non-Crystalline Solids 227-230, pages 958-961.
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