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Philosophical Magazine B Volume 76, 1997 - Issue 3
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Original Articles

Relaxation and crystallization of amorphous silicon carbide probed by optical measurements

P. Musumeci Dipartimento di Fisica, Corso Italia 57, Catania, Italy; Istituto Nazionale de Fisica per la Materia, Corso Italia 57, Catania, Italy
,
R. Reitano Dipartimento di Fisica, Corso Italia 57, Catania, Italy; Istituto Nazionale de Fisica per la Materia, Corso Italia 57, Catania, Italy
,
L. Calcagno Dipartimento di Fisica, Corso Italia 57, Catania, Italy; Istituto Nazionale de Fisica per la Materia, Corso Italia 57, Catania, Italy
,
F. Roccaforte Dipartimento di Fisica, Corso Italia 57, Catania, Italy; Istituto Nazionale de Fisica per la Materia, Corso Italia 57, Catania, Italy
,
A. Makhtari Universite Moulay Ismail, Meknes, Morocco
&
M. G. Grimaldi Dipartimento di Fisica, Corso Italia 57, Catania, Italy; Istituto Nazionale de Fisica per la Materia, Corso Italia 57, Catania, Italy
Pages 323-333 | Accepted 11 Mar 1997, Published online: 27 Sep 2006

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Sandrine Miro, Jean-Marc Costantini, Juan Huguet-Garcia & Lionel Thomé. (2014) Recrystallization of hexagonal silicon carbide after gold ion irradiation and thermal annealing. Philosophical Magazine 94:34, pages 3898-3913.
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S. Miro, J.-M. Costantini, S. Sorieul, L. Gosmain & L. Thomé. (2012) Recrystallization of amorphous ion-implanted silicon carbide after thermal annealing. Philosophical Magazine Letters 92:11, pages 633-639.
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S. Kerdiles & R. Rizk. (2002) Low temperature nanocrystallízation of silicon carbide by hydrogen reactive magnetron sputtering. Philosophical Magazine A 82:3, pages 601-614.
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Crossref
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Crossref
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Crossref
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Crossref
S Kerdiles, R Rizk, F Gourbilleau, A Pérez-Rodrı́guez, B Garrido, O González-Varona & J.R Morante. (2000) Low temperature direct growth of nanocrystalline silicon carbide films. Materials Science and Engineering: B 69-70, pages 530-535.
Crossref
Patrick R. McCurdy, Jason M. Truitt & Ellen R. Fisher. (1999) Pulsed and continuous wave plasma deposition of amorphous, hydrogenated silicon carbide from SiH4/CH4 plasmas. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17:5, pages 2475-2484.
Crossref
A Höfgen, V Heera, F Eichhorn, W Skorupa & W Möller. (1999) Annealing and recrystallization of amorphous silicon carbide produced by ion implantation. Materials Science and Engineering: B 61-62, pages 353-357.
Crossref
L Calcagno, P Musumeci & M.G Grimaldi. (1999) Ion beam irradiation of relaxed amorphous silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148:1-4, pages 583-588.
Crossref
A. Höfgen, V. Heera, F. Eichhorn & W. Skorupa. (1998) Annealing and recrystallization of amorphous silicon carbide produced by ion implantation. Journal of Applied Physics 84:9, pages 4769-4774.
Crossref
P Musumeci, L Calcagno & A Makhtari. (1998) Relaxation phenomena in keV-ion implanted hydrogenated amorphous silicon carbide. Materials Science and Engineering: A 253:1-2, pages 296-300.
Crossref
W Fukarek, R.A Yankov, W Anwand & V Heera. (1998) Damage in silicon carbide induced by Rutherford backscattering analysis. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 142:4, pages 561-570.
Crossref
G. Compagnini & G. Foti. (2011) The Effect of Bonding Disorder on the Vibrational Features of Amorphous Carbon Based Binary Alloys. MRS Proceedings 498.
Crossref

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