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Radiation Effects Volume 43, 1979 - Issue 4-5
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Original Articles

Implant ion collection in the presence of radiation enhanced diffusion and preferential sputtering of implant

G. Carter Department of Electrical Engineering, University of Salford, Salford, UK, M5 4WT
,
R. Webb Department of Electrical Engineering, University of Salford, Salford, UK, M5 4WT
&
R. Collins Department of Mathematics, University of Salford, Salford, UK, M5 4WT
Pages 125-132 | Published online: 19 Aug 2006

Citations (8)

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Read on this site (1)

T. Barnavon, J. Tousset, S. Fayeulle, P. Guiraldenq, D. Treheux & M. Robelet. (1983) Distribution of nitrogen implanted in iron as a function of fluence. Radiation Effects 77:3-4, pages 249-268.
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Articles from other publishers (7)

M. Rangaswamy & D. Farkas. (2011) Prediction of High Dose Ion Implantation Profiles as Influenced by Radiation Induced Transport and Sputtering. MRS Proceedings 45.
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IL Singer. (1984) Compositions of metals implanted to very high fluences. Vacuum 34:10-11, pages 853-859.
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HANS HENRIK ANDERSEN. 1984. Ion Implantation and Beam Processing. Ion Implantation and Beam Processing 127 187 .
Douglas M. Jamba. (1981) Dosimetry measurement in ion implanters. Nuclear Instruments and Methods in Physics Research 189:1, pages 253-263.
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Jean-Louis Seran & Yves Limoge. (1981) Sur la mobilité atomique accélérée liée à l'irradiation au cours d'une abrasion ionique. Surface Science 107:1, pages 176-206.
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A.E. Morgan, H.A.M. de Grefte, N. Warmoltz, H.W. Werner & H.J. Tolle. (1981) The influence of bombardment conditions upon the sputtering and secondary ion yields of silicon. Applications of Surface Science 7:4, pages 372-392.
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G.William Reynolds, A.R. Knudson & C.R. Gossett. (1981) Sputtering observations during binary alloy production by ion implantation. Nuclear Instruments and Methods 182-183, pages 179-185.
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