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Original Articles

An alternative method for the dechannelling correction in channelling-backscattering experiments

Pages 151-156 | Received 06 Jul 1981, Published online: 19 Aug 2006

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M. Slater, M.J. Nobes & G. Carter. (1984) Disorder production in Si+ implanted InP. Radiation Effects 83:3-4, pages 219-231.
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Zhang Tong He & G. Carter. (1983) Disorder production and annealing during He Ion RBS/channelling analysis of InP. Radiation Effects 77:1-2, pages 97-105.
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N.P. Tognetti, G. Carter, D.V. Stevanovic & D.A. Thompson. (1982) Annealing studies of ion-implanted gaas in the 40–300 K range. Radiation Effects 66:1-2, pages 15-20.
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Articles from other publishers (1)

J.S. WILLIAMS & R.G. ELLIMAN. 1989. Ion Beans for Materials Analysis. Ion Beans for Materials Analysis 261 333 .

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