Citations: Physico-Chemical Origin of Majority and Minority Carrier Traps in N-Type VPE and LPE GaAs

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Ashok Saxena, Ajai Tyagi & D Giri. (1992) Capacitance Transients on Diodes: A Practical Approach to Characterize Levels with Long Time Constants. IETE Journal of Research 38:6, pages 356-360.
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Ashok K Saxena. (1989) Vacuum Related Cr Level in Gallium Arsenide Application of Optical Deep Level Transient Spectroscopy. IETE Technical Review 6:4, pages 290-294.
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Physico-Chemical Origin of Majority and Minority Carrier Traps in N-Type VPE and LPE GaAs

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Physico-Chemical Origin of Majority and Minority Carrier Traps in N-Type VPE and LPE GaAs

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