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IETE Journal of Research Volume 29, 1983 - Issue 2
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Original Articles

A Comparative Study of the Properties of Single Velocity and Double Velocity Hetero-Junction Impatt Diodes

R.U. KhanDepartment of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi221 005.
&
B.B. PalDepartment of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi221 005.View further author information
Pages 68-71 | Received 01 Aug 1981, Published online: 10 Jul 2015

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Read on this site (1)

B B Pal, R U Khan & P Chakrabarti. (1986) A New Solid-State Device as a Source of Power in mm Wave. IETE Journal of Research 32:5, pages 397-402.
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Articles from other publishers (1)

V V Buniatyan & V M Aroutiounian. (2007) Wide gap semiconductor microwave devices. Journal of Physics D: Applied Physics 40:20, pages 6355-6385.
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