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IETE Journal of Research Volume 33, 1987 - Issue 5
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Original Articles

A Computer Study on the High Frequency Properties of Silicon mm-Wave Single Drift Impatt Diodes

S P PatiDepartment of Physics, Sambalpur University, Sambalpur768 019, India
,
J P BanerjeeCentre of Advanced Study in Radiophysics and Electronics, University of Calcutta, 1 Girish Vidyaratna Lane, Calcutta700 009, India
&
S K RoyCentre of Advanced Study in Radiophysics and Electronics, University of Calcutta, 1 Girish Vidyaratna Lane, Calcutta700 009, India
Pages 159-163 | Received 11 Jan 1987, Published online: 02 Jun 2015

Citations (3)

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Read on this site (1)

G N Dash, A K Panda, S P Pati & J K Mishra. (1993) Phase Distortion Assisted MITATT Design for Compensation of Performance Deterioration due to Tunnel Current. IETE Journal of Research 39:6, pages 375-377.
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Articles from other publishers (2)

A K Panda, G N Dash & S P Pati. (1995) Computer-aided studies on the wide-band microwave characteristics of a silicon double avalanche region (DAR) diode. Semiconductor Science and Technology 10:6, pages 854-864.
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A K Panda, G N Dash & S P Pati. (1994) Effect of the diffusion impurity profile on the microwave properties of silicon p + nn + IMPATT diodes . Semiconductor Science and Technology 9:3, pages 241-248.
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