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IETE Journal of Research Volume 52, 2006 - Issue 5: Nano Electronic Devices and Technology
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Original Articles

A Subthreshold Surface Potential and Drain Current Model for Lateral Asymmetric Channel (LAC) MOSFETs

S BaishyaDepartment of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata700 032, India. e-mail: [email protected], [email protected]View further author information
,
S ChakrabortySimplex Infrastructures Ltd, 12/1 N S Sarani, Kolkata700 087, India, e-mail: [email protected]View further author information
,
A MallikDepartment of Electronics & Communication Engineering, Kalyani Government Engineering College, Kalyani741 235, India, e-mail: [email protected]View further author information
&
C K SarkarDepartment of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata700 032, India e-mail: [email protected]View further author information
, FIETE
Pages 379-390 | Published online: 26 Mar 2015

Citations (6)

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Read on this site (1)

Swapnadip De, Angsuman Sarkar & Chandan Kumar Sarkar. (2011) Modelling of parameters for asymmetric halo and symmetric DHDMG n-MOSFETs. International Journal of Electronics 98:10, pages 1365-1381.
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Articles from other publishers (5)

Swapnadip De. 2017. Nanotechnology. Nanotechnology 33 49 .
Srijan Das, Anirban Choudhury, Soham Ghosh, Sudeshna Sarkar, Manash Chanda & Swapnadip De. (2017) Parameter modeling of linearly doped double gate MOSFET with high-k dielectrics. Parameter modeling of linearly doped double gate MOSFET with high-k dielectrics.
Angsuman Sarkar, Swapnadip De & Chandan Kumar Sarkar. (2013) Asymmetric halo and symmetric Single-Halo Dual-Material Gate and Double-Halo Dual-Material Gate n-MOSFETs characteristic parameter modeling. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 26:1, pages 41-55.
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Swapnadip De, Angsuman Sarkar, N. Mohankumar & Chandan Kumar Sarkar. (2008) Effect of fringing field in modeling of subthreshold surface potential in Dual Material Gate(DMG) MOSFETS. Effect of fringing field in modeling of subthreshold surface potential in Dual Material Gate(DMG) MOSFETS.
Angsuman Sarkar, Swapnadip De, Mohankumar Nagarajan, C. K. Sarkar & S. Baishya. (2008) Effect of fringing fields on subthreshold surface potential of channel engineered short channel MOSFETs. Effect of fringing fields on subthreshold surface potential of channel engineered short channel MOSFETs.

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