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IETE Journal of Research Volume 62, 2016 - Issue 4
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Articles

Improved T-Shaped Gate Double Heterojunction AlGaN/GaN/InGaN/GaN HEMT-Based Wideband Flat LNA

Sorour ToufaniDepartment of Electrical Engineering, Science and Research branch, Islamic Azad University, Tehran, IranView further author information
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Massoud DoustiDepartment of Electrical Engineering, Science and Research branch, Islamic Azad University, Tehran, IranView further author information
Pages 488-492 | Published online: 28 Sep 2015

Citations (7)

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Read on this site (2)

Charu Gupta, Anshul Gupta, Anil K. Bansal & Abhisek Dixit. (2021) Suppression of Short-channel Effects by Double-gate Double-channel Device Design in Normally-off AlGaN/GaN MIS-HEMTs. IETE Journal of Research 67:3, pages 425-432.
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Amin Alahyari, Massoud Dousti & Mohammad Bagher Tavakoli. (2017) A Monolithic Low Noise Channelized Active Bandpass Filter Using GaAs 0.15 µm Technology. IETE Journal of Research 63:3, pages 309-315.
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Articles from other publishers (5)

Zakarya Kourdi, Imane Four & Mohammed Khaouani. (2023) Improved performance HEMT device with backup bulk for LNA application. Engineering Research Express 5:2, pages 025026.
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Aneesh M Joseph. (2022) Fabrication and optimization of T -gate for high performance HEMT and MMIC devices. Fabrication and optimization of T -gate for high performance HEMT and MMIC devices.
Mingsai Zhu, Yuying Xie, Jinhai Shao & Yifang Chen. (2021) Nanofabrications of T shape gates for high electron mobility transistors in microwaves and THz waves, a review. Micro and Nano Engineering 13, pages 100091.
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Rahis Kumar Yadav, Pankaj Pathak & R.M. Mehra. (2018) Small-signal parameter extraction of asymmetric DCDMG AlGaN/GaN HEMT. COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 37:1, pages 386-400.
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Rahis Kumar Yadav, Pankaj Pathak & R. M. Mehra. (2017) Small Signal Parameter Extraction and DCSimulation of Asymmetric Dual Channel AlGaN/GaN Heterojunction Field Effect Transistor. Indian Journal of Science and Technology 10:16, pages 1-12.
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