Design of a Class-F Power Amplifier with GaN Device Model and Reflection Data

Merve Alemdag1 Department of Research and Development, Netas, Istanbul34912, TurkeyCorrespondence[email protected]
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Firat Kacar2 Department of Electrical and Electronics Engineering, Istanbul University-Cerrahpasa, Istanbul34320, TurkeyView further author information

Sedat Kilinc2 Department of Electrical and Electronics Engineering, Istanbul University-Cerrahpasa, Istanbul34320, TurkeyView further author information

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Wen Huang & Jiang Liu. (2023) High-efficiency class-F power amplifier based on double spiral defected ground structure. International Journal of Electronics 0:0, pages 1-14.
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Muhammad Ovais Akhter & Najam Muhammad Amin. (2021) Design and Optimization of 2.1 mW ULP Doherty Power Amplifier with Interstage Capacitances Using 65 nm CMOS Technology. Mathematical Problems in Engineering 2021, pages 1-12.
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Design of a Class-F Power Amplifier with GaN Device Model and Reflection Data

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Design of a Class-F Power Amplifier with GaN Device Model and Reflection Data

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