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High Pressure Research
An International Journal
Volume 26, 2006 - Issue 4: Proceedings of The XXXXIV European High Pressure Research Group Meeting (EHPRG'44) Prague, 4–8 September, 2006
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Original Articles

CdSnAs2 and InAs crystals at hydrostatic pressure up to 9 GPa

A. Yu. Mollaev Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, 367003, Makhachkala, RussiaCorrespondence[email protected]
,
I. K. Kamilov Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, 367003, Makhachkala, Russia
,
M. I. Daunov Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, 367003, Makhachkala, Russia
,
R. K. Arslanov Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, 367003, Makhachkala, Russia
,
A. B. Magomedov Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, 367003, Makhachkala, Russia
,
L. A. Saypulaeva Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, 367003, Makhachkala, Russia
&
S. F. Gabibov Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, 367003, Makhachkala, Russia
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Pages 445-448 | Received 22 May 2006, Published online: 02 May 2007

Citations (4)

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Read on this site (1)

I. K. Kamilov, M. I. Daunov & R. R. Bashirov. (2013) Baric polymorphism: characteristic functions and critical indexes. High Pressure Research 33:1, pages 98-107.
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Articles from other publishers (3)

I. K. Kamiliov, M. I. Daunov, G. M. Gajiev & R. K. Arslanov. (2019) On the Characteristic Features of the Impurity Energy Spectrum in Arsenides. Semiconductors 53:12, pages 1578-1583.
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I. K. Kamilov, M. I. Daunov & S. F. Gabibov. (2016) About the Deep Donor Center in n-CdSnAs2 According to the Data of a Study of Electron Transport at Hydrostatic Pressure. Russian Physics Journal 58:12, pages 1878-1880.
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Jing Hu, Liwei Shi, Yun Qin, Fei Jin, Yifeng Duan, Liang Qiu & Lei Chen. (2015) Phase transitions, band structures, elastic and lattice dynamic properties of CdSnV2 (V=P, As, Sb) under pressure from first principles. Materials Science in Semiconductor Processing 35, pages 149-161.
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