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Original Articles

Measurements of potential barrier height of grain boundaries in polycrystalline silicon by Kelvin probe force microscopy

Pages 41-49 | Received 07 Feb 2005, Accepted 26 Apr 2005, Published online: 17 Aug 2006

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Sadahiro Tsurekawa, Hiroaki Takahashi, Yumi Nishibe & Tadao Watanabe. (2013) Potential barrier at grain boundaries in polycrystalline silicon: influence of grain-boundary character and copper/iron contamination. Philosophical Magazine 93:10-12, pages 1413-1424.
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Jihua Chen, Chee Keong Tee, Max Shtein, John Anthony & David C. Martin. (2008) Grain-boundary-limited charge transport in solution-processed 6,13 bis(tri-isopropylsilylethynyl) pentacene thin film transistors. Journal of Applied Physics 103:11, pages 114513.
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Sadahiro Tsurekawa, Kota Kido & Tadao Watanabe. (2007) Interfacial state and potential barrier height associated with grain boundaries in polycrystalline silicon. Materials Science and Engineering: A 462:1-2, pages 61-67.
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