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Philosophical Magazine Letters Volume 55, 1987 - Issue 3
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Original Articles

Energy levels of dangling-bond centres in a-Si:H studied by photocapadtance transient spectroscopy

Hideyo Okushi Electrotechnical Laboratory, 1-1-4 Umezono, Sakuramura, Ibaraki, 305, Japan
&
Kazunobu Tanaka Electrotechnical Laboratory, 1-1-4 Umezono, Sakuramura, Ibaraki, 305, Japan
Pages 135-141 | Received 24 Oct 1986, Accepted 26 Nov 1986, Published online: 20 Aug 2006

Citations (8)

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Read on this site (1)

Kiminori Hattori, Hiroaki Okamoto & Yoshihiro Hamakawa. (1988) Transient photocurrent study of the dangling bond centre in undoped amorphous silicon. Philosophical Magazine B 57:1, pages 13-29.
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Articles from other publishers (7)

Mihail P. Petkov, Marc H. Weber, Kelvin G. Lynn, Richard S. Crandall & Vinita J. Ghosh. (1999) Direct Evidence of Phosphorus-Defect Complexes in -Type Amorphous Silicon and Hydrogenated Amorphous Silicon . Physical Review Letters 82:19, pages 3819-3822.
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H Okushi, Y Tokumaru & H Naka. (1992) Characterization of EL2 in GaAs wafers by scanning isothermal transient spectroscopy. Semiconductor Science and Technology 7:1A, pages A196-A201.
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Hideyo Okushi, Satoshi Yamasaki & Kazunobu Tanaka. (1992) Light-induced defects in phosphorus-doped hydrogenated amorphous silicon. Journal of Non-Crystalline Solids 141, pages 176-187.
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Hideyo Okushi, Tatsuya Furui, Ratnabali Banerjee & Kazunobu Tanaka. (1989) Light-induced changes of gap-state profile in phosphorus-doped hydrogenated amorphous silicon. Applied Physics Letters 54:5, pages 439-441.
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A. Werner & M. Kunst. (1988) Electron and hole dynamics in amorphous silicon. Journal of Applied Physics 64:1, pages 211-217.
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Kouji Mori, Hideyo Okushi & Kazunobu Tanaka. (1987) Energy level of neutral dangling-bond center (DO) in undoped a:Si:H determined by isothermal capacitance transient spectroscopy under high temperature. Journal of Non-Crystalline Solids 97-98, pages 723-726.
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Hideyo Okushi & Kazunobu Tanaka. (1987) Energy level and photoionization cross section of gap states in a-Si:H. Journal of Non-Crystalline Solids 97-98, pages 75-78.
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