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Original Articles

The extended-state hole mobility in amorphous silicon

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Pages 135-141 | Received 02 Nov 1987, Accepted 10 Nov 1987, Published online: 20 Aug 2006

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E.Z. Liu, P. Wickboldt, A.E. Wetsel, D. Pang, J.H. Chen & W. Paul. (1994) Mobility field dependence in a-Ge:H, a-SiGe:H, compensated a-Si: H, amorphous multilayer Si/SiGe/Si and the long-range potential fluctuation model. Philosophical Magazine B 70:1, pages 109-120.
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C.E. Nebel & R.A. Street. (1993) Transient hole currents in hydrogenated amorphous silicon at low temperatures and high fields. Philosophical Magazine B 67:3, pages 407-415.
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A.C. Hourd, D.L. Melville & W.E. Spear. (1991) Electronic properties of amorphous and microcrystalline silicon prepared in a microwave plasma from SiF4 . Philosophical Magazine B 64:5, pages 533-550.
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D.M. Goldie, W.E. Spear & E.Z. Liu. (1990) Electron and hole transport in compensated amorphous silicon. Philosophical Magazine B 62:5, pages 509-525.
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W.E. Spear, P.G. Lecomber & D.M. Goldie. (1990) The investigation of charge transport in compensated amorphous silicon. Critical Reviews in Solid State and Materials Sciences 16:6, pages 389-402.
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WalterE. Spear & CarolynS. Cloude. (1988) Electron and hole transport in the band-tail states of amorphous silicon at low temperatures. Philosophical Magazine B 58:5, pages 467-484.
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Articles from other publishers (3)

A.W. McKinnon, S. Baker & M.E. Welland. (1992) Scannint tunnelling microscopy of plasma- and photo-enhanced chemical vapour deposited hydrogenated amorphous silicon. Journal of Non-Crystalline Solids 139, pages 157-164.
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M. Nesládek, A. Tříska & G.J. Adriaenssens. (1992) Study of the deep-states density by time-resolved transient photocurrent measurements. Journal of Non-Crystalline Solids 141, pages 155-161.
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Alejandro J. Hamed. (1991) Persistent photoconductance in doping-modulated and compensated a -Si:H . Physical Review B 44:11, pages 5585-5602.
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