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Philosophical Magazine Letters Volume 65, 1992 - Issue 5
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Original Articles

The double-sign anomaly of the Hall coefficient in amorphous silicon: Verification by computer simulations

J. M. Holender Department of Physics, Leeds University, Leeds, LS2, England; Institute of Physics, Jagellonian University, Kraków, Poland
&
G. J. Morgan Department of Physics, Leeds University, Leeds, LS2, England
Pages 225-231 | Received 03 Feb 1992, Accepted 18 Feb 1992, Published online: 20 Aug 2006

Citations (11)

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Read on this site (1)

D. Weaire & D. Hobbs. (1993) Electrons and holes in amorphous silicon. Philosophical Magazine Letters 68:4, pages 265-272.
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Articles from other publishers (10)

Anran Guo, Jian He, Chong Wang, Wei Li & Yadong Jiang. Carrier sign reversal in amorphous silicon ruthenium thin films deposited by co-sputtering. Carrier sign reversal in amorphous silicon ruthenium thin films deposited by co-sputtering.
Pedro Barquinha, Rodrigo Martins, Luis Pereira & Elvira Fortunato. 2012. Transparent Oxide Electronics. Transparent Oxide Electronics 9 61 .
I. Crupi, S. Mirabella, D. D’Angelo, S. Gibilisco, A. Grasso, S. Di Marco, F. Simone & A. Terrasi. (2010) Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition. Journal of Applied Physics 107:4.
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Marek T. Michalewicz & Mark Priebatsch. (1995) Perfect scaling of the electronic structure problem on a SIMD architecture. Parallel Computing 21:5, pages 853-870.
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Andrea d’Andrea, Michele Cini, Rodolfo Del Sole, Lucia Reining, Claudio Verdozzi, Raffaello Girlanda, Edoardo Piparo, David Hobbs & Denis Weaire. 1995. Epioptics. Epioptics 163 181 .
Marek T. Michalewicz. (1994) Massively parallel calculations of the electronic structure of non-periodic micro-crystallites of transition metal oxides. Computer Physics Communications 79:1, pages 13-23.
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J M Holender & G J Morgan. (1994) Electron localization in models of hydrogenated amorphous silicon and pure amorphous silicon. Modelling and Simulation in Materials Science and Engineering 2:1, pages 1-8.
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G.J. Morgan, J. Okumu, J.M. Holender, D. Weaire & D. Hobbs. (1993) Electrons, holes, and the hall effect in amorphous silicon. Journal of Non-Crystalline Solids 164-166, pages 457-460.
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J. M. Holender, G. J. Morgan & R. Jones. (1993) Model of hydrogenated amorphous silicon and its electronic structure. Physical Review B 47:7, pages 3991-3994.
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J M Holender & G J Morgan. (1992) The electronic structure and conductivity of large models of amorphous silicon. Journal of Physics: Condensed Matter 4:18, pages 4473-4482.
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