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Critical Reviews in Solid State and Materials Sciences Volume 14, 1988 - Issue 2
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Original Articles

Models for the oxidation of silicon

Eugene A. Irene Department of Chemistry, University of North Carolina, Chapel Hill, North Carolina
Pages 175-223 | Published online: 27 Sep 2006

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Volker Presser & KlausG. Nickel. (2008) Silica on Silicon Carbide. Critical Reviews in Solid State and Materials Sciences 33:1, pages 1-99.
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S.L. Zhang & F.M. D'Heurle. (1991) A note on the linear-parabolic law of phase formation. Philosophical Magazine A 64:3, pages 619-627.
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Eugene A. Irene. 2005. Handbook of Ellipsometry. Handbook of Ellipsometry 569 636 .
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Robert L. Opila & Dennis W. Hess. (2003) A Century of Dielectric Science and Technology. Journal of The Electrochemical Society 150:1, pages S1.
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Y. J. Chabal, Krishnan Raghavachari, X. Zhang & E. Garfunkel. (2002) Silanone on Si(100): intermediate for initial silicon oxidation . Physical Review B 66:16.
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A. H. Mueller, N. A. Suvorova, E. A. Irene, O. Auciello & J. A. Schultz. (2002) Real-time observations of interface formation for barium strontium titanate films on silicon. Applied Physics Letters 80:20, pages 3796-3798.
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M. L. Green, E. P. Gusev, R. Degraeve & E. L. Garfunkel. (2001) Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits. Journal of Applied Physics 90:5, pages 2057-2121.
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Eugene A. Irene. (2001) Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime. Solid-State Electronics 45:8, pages 1207-1217.
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A. Raveh, J. Brewer & E. A. Irene. (2001) Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Effect of plasma modes and process parameters. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19:1, pages 9-16.
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L. Lai & E. A. Irene. (2000) Si/SiO 2 interface roughness study using Fowler–Nordheim tunneling current oscillations. Journal of Applied Physics 87:3, pages 1159-1164.
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Kwok-On Ng & David Vanderbilt. (1999) Structure and oxidation kinetics of the Si(100)- interface . Physical Review B 59:15, pages 10132-10137.
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V. V. Afanas'ev, A. Stesmans & M. E. Twigg. (1996) Epitaxial Growth of Si Produced in Silicon by Oxygen Ion Implantation . Physical Review Letters 77:20, pages 4206-4209.
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E.P. Gusev, H.C. Lu, T. Gustafsson & E. Garfunkel. (1996) The initial oxidation of silicon: new ion scattering results in the ultra-thin regime. Applied Surface Science 104-105, pages 329-334.
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H.C. Lu, E.P. Gusev, E. Garfunkel & T. Gustafsson. (1996) An ion scattering study of the interaction of oxygen with Si(111): surface roughening and oxide growth. Surface Science 351:1-3, pages 111-128.
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Veena Misra, Xiaoli Xu, Brian E. Hornung, Richard T. Kuehn, Donald S. Miles, John R. Hauser & Jimmie J. Wortman. (1996) High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide. Journal of Electronic Materials 25:3, pages 527-535.
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