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Original Articles

Strained- layer semiconductor superlattices

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Pages 131-160 | Published online: 27 Sep 2006

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Jiannong Wang, JohnW. Steeds & DavidA. Woolf. (1992) The study of misfit dislocations in InxGa1-xAs/GaAs strained quantum well structures. Philosophical Magazine A 65:4, pages 829-839.
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Articles from other publishers (30)

A. H. M. Abdul Wasey & G.P. Das. (2022) Manifestation of interface-induced effects of two-dimensional MSi2/Si(111) quantum heterostructures: A first principles study. Physica E: Low-dimensional Systems and Nanostructures 142, pages 115291.
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Donald M. Mattox. 2010. Handbook of Physical Vapor Deposition (PVD) Processing. Handbook of Physical Vapor Deposition (PVD) Processing 333 398 .
Raman Vaidyanathan, Steven M. Cox, Uwe Happek, Dhego Banga, Mkhulu K. Mathe & John L. Stickney. (2006) Preliminary Studies in the Electrodeposition of PbSe/PbTe Superlattice Thin Films via Electrochemical Atomic Layer Deposition (ALD). Langmuir 22:25, pages 10590-10595.
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Bernard Gil. 1999. Gallium Nitride (GaN) II. Gallium Nitride (GaN) II 209 274 .
Donald M. Mattox. 1998. Handbook of Physical Vapor Deposition (PVD) Processing. Handbook of Physical Vapor Deposition (PVD) Processing 472 568 .
F.E.G Guimarães, P.P González-Borrero, D Lubyshev & P Basmaji. (1996) Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented heterostructures. Solid-State Electronics 40:1-8, pages 659-663.
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S.F. Fang & Hadis Morkoç. 1995. Integrated Optoelectronics. Integrated Optoelectronics 145 209 .
K. H. Ploog, A. Trampert & E. Tournié. (1994) Defect control in highly mismatched III–V semiconductor heterostructures through virtual-surfactant-mediated molecular beam epitaxy. Physica Status Solidi (a) 146:1, pages 353-370.
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J Y Yao, T G Andersson & G L Dunlop. (1994) Microstructures and critical thicknesses of In x Ga 1-x As/GaAs strained-layer structures . Semiconductor Science and Technology 9:5, pages 1086-1095.
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. 1994. Surface Engineering. Surface Engineering 538 555 .
M. Beaudoin, R.A. Masut, L. Isnard, P. Desjardins, A. Bensaada, G. L'Espérance & R. Leonelli. (2011) Band Offsets of InAs x P 1−X /InP Strained Layer Quantum Wells Grown by Lp-Movpe Using TBAs . MRS Proceedings 358.
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Karen J. Moore, Philippe Boring, Bernard Gil & Karl Woodbridge. (1993) Observation of many-body effects and band-gap renormalization in low-dimensional systems with built-in piezoelectric fields. Physical Review B 48:24, pages 18010-18015.
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V. P. Gnezdilov, D. J. Lockwood, J. B. Webb & P. Maigné. (1993) Raman scattering from In1− x Al x Sb metastable epilayers . Journal of Applied Physics 74:11, pages 6883-6887.
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Philippe Boring, Bernard Gil & Karen J. Moore. (1993) Dramatic photoinduction of hole tunneling in double quantum wells with built-in piezoelectric fields. Physical Review Letters 71:12, pages 1875-1878.
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Shizuo Fujita, Yoichi Kawakami & Shigeo Fujita. (1993) Fabrication of II–VI semiconductor quantum well structures in ZnCdSSe alloy systems. Physica B: Condensed Matter 191:1-2, pages 57-70.
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Eric Tournié & Kalus H. Ploog. (1993) Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures. Thin Solid Films 231:1-2, pages 43-60.
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A. Ruiz, C. Giannini, L. Tapfer, K. Ploog, M.I. Alonso, G. Armelles, M. Garriga & P. Castrillo. (1993) Growth and characterization of A1As/GaInAs multiple quantum wells. Journal of Crystal Growth 127:1-4, pages 611-615.
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Ravi Droopad, Don S. Gerber, Calvin Choi & George N. Maracas. (1993) Pseudomorphic InGaAs/GaAs and GaAs/A1GaAs asymmetric triangular quantum wells grown by MBE for optoelectronic device applications. Journal of Crystal Growth 127:1-4, pages 606-610.
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Calvin Yi-Ping Chao & Shun Lien Chuang. (1992) Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells. Physical Review B 46:7, pages 4110-4122.
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G P Das. (1992) Electronic structure of epitaxial interfaces. Pramana 38:6, pages 545-639.
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Dennis Rioux, Rajesh Patel & Hartmut Höchst. (1992) Structural and electronic properties of strained Ge/InP(100) heterostructures. Physical Review B 45:11, pages 6060-6068.
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G. Scamarcio, O. Brandt, L. Tapfer & K. Ploog. (1992) Influence of strain on structural and vibrational properties of (InAs)m(GaAs)n strained superlattices grown by molecular beam epitaxy. Applied Surface Science 56-58, pages 610-616.
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David W. Niles & Hartmut Höchst. (1991) Strain-induced changes in the electronic valence-band structure of a cubic CdS(100) film. Physical Review B 44:19, pages 10965-10968.
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R. Droopad, R.A. Puechner, K.Y. Choi, K.T. Shiralagi & G.N. Maracas. (1991) Molecular beam epitaxial growth and optical properties of strained rectangular and asymmetric triangular InGaAs quantum well structures. Journal of Crystal Growth 114:3, pages 327-336.
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R. Droopad, K. Y. Choi, R. A. Puechner, K. T. Shiralagi, D. S. Gerber & G. N. Maracas. (1991) Optical properties of strained asymmetric triangular InGaAs/GaAs multiple quantum wells. Applied Physics Letters 59:18, pages 2308-2310.
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P. Demeester, G. Coudenys, L. Buydens, A. Ackaert, I. Moerman, I. Pollentier & P. van Daele. (1991) Recent developments in relaxed and strained lattice mismatched heterostructures. Materials Science and Engineering: B 9:1-3, pages 129-136.
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R. Droopad, R. A. Puechner, K. T. Shiralagi, K. Y. Choi & G. N. Maracas. (1991) Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfaces. Applied Physics Letters 58:16, pages 1777-1779.
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G. Scamarcio, O. Brandt, L. Tapfer, D. J. Mowbray, M. Cardona & K. Ploog. (1991) Structural and vibrational properties of (InAs) m (GaAs) n strained superlattices grown by molecular beam epitaxy . Journal of Applied Physics 69:2, pages 786-792.
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David W. Niles & Hartmut HÖChst. (2011) Orientation Dependence of the Stability of Strained Sn Eplayers Grown On Cd 0.8 Zn 0.2 Te Substrates . MRS Proceedings 216.
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David W. Niles & Hartmut Höchst. (2011) Rheed Study of Strain Relaxation in Epitaxial Cds and Sn Overlayers. MRS Proceedings 208.
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