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Critical Reviews in Solid State and Materials Sciences Volume 19, 1994 - Issue 3
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Original Articles

Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage

Johan B. Malherbe Department of Physics, University of Pretoria, Pretoria, 0002, South Africa
Pages 129-195 | Published online: 24 Oct 2006

Citations (62)

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Read on this site (2)

JOHANB MALHERBE. (2003) Ripple wavelength dependence on ion bombardment energy. Transactions of the Royal Society of South Africa 58:2, pages 149-155.
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Maria Stepanova. (1997) Modelling of long-range damage in ion-bombarded gaas. Radiation Effects and Defects in Solids 141:1-4, pages 269-280.
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Articles from other publishers (60)

L.R. Shaginyan, M.I. Mironov, V. V. Kremenetsky & V.N. Novichenko. (2023) Transformations in Composition and Structure in Multicomponent Alloy Targets Occurring during Their Exploitation. Transformations in Composition and Structure in Multicomponent Alloy Targets Occurring during Their Exploitation.
Wolfram Hempel & Theresa Magorian Friedlmeier. (2022) Influence of temperature and sputter source on Cu(In,Ga)Se 2 SIMS depth profiles . Surface and Interface Analysis 55:6-7, pages 437-442.
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Leonid R. Shaginyan, Mikhail I. Mironov, Sergey A. Firstov, Nicolay A. Krapivka, Valery V. Kremenitsky & Viktor N. Novichenko. (2023) Variations in composition and structure occurring in multicomponent alloy targets during their service term. The European Physical Journal Applied Physics 98, pages 4.
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Bernd RauschenbachBernd Rauschenbach. 2022. Low-Energy Ion Irradiation of Materials. Low-Energy Ion Irradiation of Materials 123 174 .
Johan B. Malherbe & O.S. Odutemowo. (2021) Diffusion and segregation of Sr in glassy carbon: Model and analysis. Diamond and Related Materials 120, pages 108709.
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O.S. Odutemowo, J.B. Malherbe, R. Limbach, L. Wondraczek, E. Wendler, A. Undisz, E.G. Njoroge, D.O. Idisi & M.S. Dhlamini. (2021) Changes in the mechanical, structural and electrical properties of glassy carbon due to strontium and silver co-implantation and annealing. Applied Surface Science 537, pages 147929.
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O.S. Odutemowo, M.S. Dhlamini, E. Wendler, D.F. Langa, M.Y.A. Ismail & J.B. Malherbe. (2020) Effect of heat treatment on the migration behaviour of Sr and Ag CO-implanted in glassy carbon. Vacuum 171, pages 109027.
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R.Q. Odendaal & Johan B. Malherbe. (2019) Deconvolution models for determining the real surface composition of InP (1 0 0) after bombardment with 5 keV Ar ions at different angles. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 460, pages 147-154.
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Xiao Liang, Xuewei Wang, Jingbo Guo & Xiang Wang. (2017) Preferential sputtering on multicomponent optical surfaces. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 410, pages 153-157.
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Felix Predan, András Kovács, Jens Ohlmann, David Lackner, Rafal E. Dunin-Borkowski, Frank Dimroth & Wolfgang Jäger. (2017) Effects of thermal annealing on structural and electrical properties of surface-activated n-GaSb/n-GaInP direct wafer bonds. Journal of Applied Physics 122:13.
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Felix Predan, Dirk Reinwand, Romain Cariou, Markus Niemeyer & Frank Dimroth. (2016) Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34:3.
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Hubert Gnaser & Tobias Radny. (2015) Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography. Ultramicroscopy 159, pages 232-239.
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Detlef Kramczynski & Hubert Gnaser. (2015) Nanocone formation on ion-bombarded InP surfaces. Applied Surface Science 355, pages 653-659.
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F. Predan, D. Reinwand, V. Klinger & F. Dimroth. (2015) Transparent and electrically conductive GaSb/Si direct wafer bonding at low temperatures by argon-beam surface activation. Applied Surface Science 353, pages 1203-1207.
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Kenji Kikuchi, Shigeyuki Imura, Kazunori Miyakawa, Hiroshi Ohtake, Misao Kubota & Eiji Ohta. (2015) Photocurrent multiplication in Ga2O3/CuInGaSe2 heterojunction photosensors. Sensors and Actuators A: Physical 224, pages 24-29.
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Tobias Radny & Hubert Gnaser. (2014) Self-organizing nanodot structures on InP surfaces evolving under low-energy ion irradiation: analysis of morphology and composition. Nanoscale Research Letters 9:1.
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R.J. Kuhudzai, N.G. van der Berg, J.B. Malherbe, T.T. Hlatshwayo, C.C. Theron, A.V. Buys, A.J. Botha, E. Wendler & W. Wesch. (2014) Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 332, pages 251-256.
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A. Gaucher, E. Martinez, J. Baylet & C. Cardinaud. (2014) Quantitative Auger Electron Spectroscopic Analysis of Hg1−x Cd x Te. Journal of Electronic Materials 43:4, pages 1255-1262.
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S. V. Baryshev, N. G. Becker, A. V. Zinovev, C. E. Tripa & I. V. Veryovkin. (2013) Dual-beam versus single-beam depth profiling: Same sample in same instrument. Rapid Communications in Mass Spectrometry 27:24, pages 2828-2832.
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Johan B Malherbe. (2013) Diffusion of fission products and radiation damage in SiC. Journal of Physics D: Applied Physics 46:47, pages 473001.
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Johan B. Malherbe, N.G. van der Berg, A.J. Botha, E. Friedland, T.T. Hlatshwayo, R.J. Kuhudzai, E. Wendler, W. Wesch, P. Chakraborty & E.F. da Silveira. (2013) SEM analysis of ion implanted SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 315, pages 136-141.
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M. P. Seah. (2013) Universal Equation for Argon Gas Cluster Sputtering Yields. The Journal of Physical Chemistry C 117:24, pages 12622-12632.
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A Ouerdane, M Bouslama, M Ghaffour, A Abdellaoui, A Nouri, K Hamaida & Y Monteuil. (2012) AES and EELS tools associated to TRIM simulation methods to study nanostructures on III-V semiconductor surfaces. IOP Conference Series: Materials Science and Engineering 28, pages 012024.
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Yu. Kudryavtsev. (2012) Ion beam sputtering of multicomponent targets: Surface composition change and cluster emission. Technical Physics 57:2, pages 247-250.
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D. Datta, Shyamal Mondal & S.R. Bhattacharyya. (2012) Growth process of GaAs ripples as a function of incident Ar-ion dose. Applied Surface Science 258:9, pages 4152-4155.
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M.A. Karolewski. (2011) The sputtering properties of artificial polymorphic AB binary compound crystals. Applied Surface Science 257:21, pages 8864-8870.
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Gottlieb S. Oehrlein, Raymond J. Phaneuf & David B. Graves. (2011) Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29:1.
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M P Seah & T S Nunney. (2010) Sputtering yields of compounds using argon ions. Journal of Physics D: Applied Physics 43:25, pages 253001.
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J. H. Wu, W. Ye, B. L. Cardozo, D. Saltzman, K. Sun, H. Sun, J. F. Mansfield & R. S. Goldman. (2009) Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces. Applied Physics Letters 95:15, pages 153107.
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A. Sulyok, M. Menyhard & J.B. Malherbe. (2007) Stability of ZnO{0001} against low energy ion bombardment. Surface Science 601:8, pages 1857-1861.
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Hubert Gnaser. 2007. Sputtering by Particle Bombardment. Sputtering by Particle Bombardment 231 328 .
Johan B. Malherbe, N.G. van der Berg, R.Q. Odendaal, F. Krok & M. Szymonski. (2006) Ion energy dependence of nanodot formation by nitrogen-bombarded InP. Solar Energy Materials and Solar Cells 90:10, pages 1504-1512.
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Madhivanan Muthuvel & John Stickney. (2006) Surface Chemistry of InP(100) After Wet and Electrochemical Etching. Journal of The Electrochemical Society 153:1, pages C67.
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V. Tuboltsev, P. Jalkanen, M. Kolodyazhnaya & J. Räisänen. (2005) Composition dependence of sputter yield . Physical Review B 72:20.
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P. Piercy & A. M.-J. Castonguay. (2005) Diffusion-limited kinetics of terrace growth on GaAs(110). Physical Review B 72:11.
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J. D. Benson, A. J. Stoltz, J. B. Varesi, L. A. Almeida, E. P. G. Smith, S. M. Johnson, M. Martinka, A. W. Kaleczyc, J. K. Markunas, P. R. Boyd & J. H. Dinan. (2005) Surface structure of plasma-etched (211)B HgCdTe. Journal of Electronic Materials 34:6, pages 726-732.
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Johan B. Malherbe, N.G. van der Berg, F. Claudel, S.O.S. Osman, R.Q. Odendaal, F. Krok & M. Szymonski. (2005) Fluence dependence of the surface roughness of InP after bombardment . Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 230:1-4, pages 533-538.
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I. P. Soshnikov. (2005) Atomic Structure of MBE-Grown GaAs Nanowhiskers. Physics of the Solid State 47:12, pages 2213.
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G. Zhao, G. Hill, S.M. Daud & K.J. Snowdon. (2005) Fabrication of nanowires on InP[100] by Ar/sup +/ irradiation. Fabrication of nanowires on InP[100] by Ar/sup +/ irradiation.
I. P. Soshnikov, A. A. Tonkikh, G. E. Cirlin, Y. B. Samsonenko & V. M. Ustinov. (2004) Peculiarities of the MBE growth of nanowhiskers on GaAs(100) substrates. Technical Physics Letters 30:9, pages 765-768.
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J. Bonse, M. Munz & H. Sturm. (2004) Scanning Force Microscopic Investigations of the Femtosecond Laser Pulse Irradiation of Indium Phosphide in Air. IEEE Transactions On Nanotechnology 3:3, pages 358-367.
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J. D. Benson, A. J. Stoltz, J. B. Varesi, M. Martinka, A. W. Kaleczyc, L. A. Almeida, P. R. Boyd & J. H. Dinan. (2004) Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches. Journal of Electronic Materials 33:6, pages 543-551.
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A Tolstogouzov, S Daolio & C Pagura. (2004) MARISS study on ion yields of Ne+ scattered from III–V compound semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 217:2, pages 246-252.
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Johan B. Malherbe. (2003) Bombardment-induced ripple topography on GaAs and InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 212, pages 258-263.
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D Datta, S.R Bhattacharyya, T.K Chini & M.K Sanyal. (2002) Evolution of surface morphology of ion sputtered GaAs(). Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 193:1-4, pages 596-602.
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H. W. Werner & P. R. Boudewijn. 2002. Beam Effects, Surface Topography, and Depth Profiling in Surface Analysis. Beam Effects, Surface Topography, and Depth Profiling in Surface Analysis 355 419 .
M. N. Drozdov, V. M. Danil’tsev, Yu. N. Drozdov, O. I. Khrykin & V. I. Shashkin. (2001) A new method for determining the sharpness of InGaAs/GaAs heterojunctions by auger depth profiling. Technical Physics Letters 27:10, pages 868-870.
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M. P. Seah, S. J. Spencer, P. J. Cumpson & J. E. Johnstone. (2000) Sputter-induced cone and filament formation on InP and AFM tip shape determination. Surface and Interface Analysis 29:11, pages 782-790.
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Vincent S. Smentkowski. (2000) Trends in sputtering. Progress in Surface Science 64:1-2, pages 1-58.
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Á Barna, B Pécz & M Menyhard. (1999) TEM sample preparation by ion milling/amorphization. Micron 30:3, pages 267-276.
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J.B Malherbe & R.Q Odendaal. (1999) Ion sputtering, surface topography, SPM and surface analysis of electronic materials. Applied Surface Science 144-145, pages 192-200.
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M.P Seah, S.J Spencer, P.J Cumpson & J.E Johnstone. (1999) Cones formed during sputtering of InP and their use in defining AFM tip shapes. Applied Surface Science 144-145, pages 151-155.
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R Menzel, T Bachmann, F Machalett, W Wesch, U Lang, M Wendt, C Musil & R Mühle. (1998) Surface smoothing and patterning of SiC by focused ion beams. Applied Surface Science 136:1-2, pages 1-7.
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F Frost, A Schindler & F Bigl. (1998) Reactive ion beam etching of InSb and InAs with ultrasmooth surfaces. Semiconductor Science and Technology 13:5, pages 523-527.
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M Krawczyk, A Jablonski, S Tougaard, J Toth, D Varga & G Gergely. (1998) The inelastic mean free path and the inelastic scattering cross-section of electrons in GaAs determined from highly resolved electron energy spectra. Surface Science 402-404, pages 491-495.
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L. Zommer, B. Lesiak, A. Jablonski, G. Gergely, M. Menyhard, A. Sulyok & S. Gurban. (1998) Determination of the inelastic mean free path of electrons in GaAs and InP after surface cleaning by ion bombardment using elastic peak electron spectroscopy. Journal of Electron Spectroscopy and Related Phenomena 87:3, pages 177-185.
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S. Valeri, G.C. Gazzadi, A. Rota & A. di Bona. (1997) Early stage in low energy ion-induced damage on InP(110) surface. Applied Surface Science 120:3-4, pages 323-334.
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I. Thurzo & J. Ivančo. (1997) Attempts to correlate hydrogen plasma-induced and Si3N4/GaAs interface-related surface states: a charge deep-level transient spectroscopy study. Applied Surface Science 108:1, pages 187-196.
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G.R. Bell, C.F. McConville & T.S. Jones. (1996) Plasmon excitations and the effects of surface preparation in n-type InAs(001) studied by electron energy loss spectroscopy. Applied Surface Science 104-105, pages 17-23.
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R. Islam & D.R. Rao. (1996) X-ray photoelectron spectroscopy of Zn1−xCdxSe thin films. Journal of Electron Spectroscopy and Related Phenomena 81:1, pages 69-77.
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