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Ion beam effects in devices, SIMOX, space devices, semiconductors and RRAM

Raman scattering and FTIR studies of 100 MeV Fe9+ ion-irradiated gallium phosphide

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Pages 743-748 | Received 17 Oct 2010, Accepted 31 Mar 2011, Published online: 19 Jul 2011

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Vidya Jadhav, M. D. Kirkire, S. K. Dubey, A. D. Yadav, A. Singh, F. Singh & D. Kanjilal. (2013) Effects of 200 MeV silver ion irradiation on the optical properties of gallium phosphide. Radiation Effects and Defects in Solids 168:7-8, pages 564-570.
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Alexander V. Uvarov, Alexander S. Gudovskikh, Artem I. Baranov, Alina A. Maksimova, Dmitriy A. Kudryashov, Ekaterina A. Vyacheslavova, George E. Yakovlev & Vasily I. Zubkov. (2021) Plasma-Deposited Multilayer GaP/Si p-i-n Structure for Tandem Silicon-Based Solar Cells. ACS Applied Energy Materials 5:5, pages 5374-5380.
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N. Shiwakoti, A. Bobby, K. Asokan & Bobby Antony. (2018) Interface and transport properties of gamma irradiated Au/n-GaP Schottky diode. Materials Science in Semiconductor Processing 74, pages 1-6.
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S.K. Dubey. (2017) Surface modification of gallium phosphide caused by swift (200MeV) silver ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 392, pages 46-50.
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N. Shiwakoti, A. Bobby, K. Asokan & Bobby Antony. (2017) The role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode. Microelectronics Reliability 69, pages 40-46.
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