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Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 129, 1994 - Issue 1-2
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Original Articles

Molecular dynamics simulations of bulk displacement threshold energies in Si

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Pages 127-131 | Received 06 Jun 1991, Published online: 19 Aug 2006

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Ying Bai, Zeng-Hua Cai, Yu-Ning Wu & Shiyou Chen. (2021) Enhancing neutron radiation resistance of silicon-based semiconductor devices through isotope separation and enrichment. Radiation Effects and Defects in Solids 176:5-6, pages 419-430.
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S. Uhlmann, Th. Frauenheim, K.J. Boyd, D. Marton & J.W. Rabalais. (1997) Elementary processes during low-energy self-bombardment of Si(100) 2 × 2 a molecular dynamics study. Radiation Effects and Defects in Solids 141:1-4, pages 185-198.
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Articles from other publishers (20)

Cheng-Wei Lee, James A. Stewart, Rémi Dingreville, Stephen M. Foiles & André Schleife. (2020) Multiscale simulations of electron and ion dynamics in self-irradiated silicon. Physical Review B 102:2.
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J. A. Stewart, G. Brookman, P. Price, M. Franco, W. Ji, K. Hattar & R. Dingreville. (2018) Characterizing single isolated radiation-damage events from molecular dynamics via virtual diffraction methods. Journal of Applied Physics 123:16.
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J. Huang, M. Loeffler, U. Muehle, W. Moeller, J.J.L. Mulders, L.F.Tz. Kwakman, W.F. Van Dorp & E. Zschech. (2018) Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation. Ultramicroscopy 184, pages 52-56.
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Zihai Shi, Shizuo Watanabe, Kenichi Ogawa & Hajime Kubo. 2018. Structural Resilience in Sewer Reconstruction. Structural Resilience in Sewer Reconstruction 17 78 .
Noritaka Kawasegi. 2018. Micro and Nano Fabrication Technology. Micro and Nano Fabrication Technology 529 554 .
Noritaka Kawasegi. 2017. Microbial Toxins. Microbial Toxins 1 26 .
Noritaka Kawasegi. 2017. Microbial Toxins. Microbial Toxins 1 26 .
Gyorgy Vizkelethy & Stephen M. Foiles. (2016) Determination of recombination radius in Si for binary collision approximation codes. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 371, pages 111-115.
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Victor Castano & Igor SchagaevVictor Castano & Igor Schagaev. 2015. Resilient computer system design. Resilient computer system design 79 111 .
Eero Holmström, Arkady Krasheninnikov & Kai Nordlund. (2011) Quantum and Classical Molecular Dynamics Studies of the Threshold Displacement Energy in Si Bulk and Nanowires. MRS Proceedings 1181.
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E. Holmström, A. Kuronen & K. Nordlund. (2008) Threshold defect production in silicon determined by density functional theory molecular dynamics simulations. Physical Review B 78:4.
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Lourdes Pelaz, Luis A. Marqués & Juan Barbolla. (2004) Ion-beam-induced amorphization and recrystallization in silicon. Journal of Applied Physics 96:11, pages 5947-5976.
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J. Tarus, K. Nordlund, A. Kuronen & J. Keinonen. (1998) Effect of surface on defect creation by self-ion bombardment of Si(001). Physical Review B 58:15, pages 9907-9915.
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Wolfgang Windl, Thomas J Lenosky, Joel D Kress & Arthur F Voter. (1998) First-principles investigation of radiation induced defects in Si and SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 141:1-4, pages 61-65.
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K. J. Boyd, D. Marton, J. W. Rabalais, S. Uhlmann & Th. Frauenheim. (1998) Semiquantitative subplantation model for low energy ion interactions with solid surfaces. III. Ion beam homoepitaxy of Si. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16:2, pages 463-471.
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D. Marton, K.J. Boyd & J.W. Rabalais. (1998) Hyperthermal particle enhanced silicon epitaxy. Chemical Physics Letters 283:3-4, pages 215-220.
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T.Diaz de la Rubia, N. Soneda, M.J. Caturla & E.A. Alonso. (1997) Defect production and annealing kinetics in elemental metals and semiconductors. Journal of Nuclear Materials 251, pages 13-33.
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M.-J. Caturla, T. Díaz de la Rubia, L. A. Marqués & G. H. Gilmer. (1996) Ion-beam processing of silicon at keV energies: A molecular-dynamics study. Physical Review B 54:23, pages 16683-16695.
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T. Diaz de la Rubia. (1996) Defect production mechanisms in metals and covalent semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 120:1-4, pages 19-26.
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J. W. Rabalais, A. H. Al-Bayati, K. J. Boyd, D. Marton, J. Kulik, Z. Zhang & W. K. Chu. (1996) Ion-energy effects in silicon ion-beam epitaxy. Physical Review B 53:16, pages 10781-10792.
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