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Radiation Effects and Defects in Solids

Incorporating Plasma Science and Plasma Technology

Volume 141, 1997 - Issue 1-4

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2. Applications to surfaces, thin films and semiconductors

Elementary processes during low-energy self-bombardment of Si(100) 2 × 2 a molecular dynamics study

S. Uhlmann Institute of Physics, University of Technology Chemnitz, D-09107, Chemnitz, Germany

Th. Frauenheim Institute of Physics, University of Technology Chemnitz, D-09107, Chemnitz, Germany

K. J. Boyd Department of Chemistry, University of Houston, Houston, TX, 77204-5641, USA

D. Marton Department of Chemistry, University of Houston, Houston, TX, 77204-5641, USA

J. W. Rabalais Department of Chemistry, University of Houston, Houston, TX, 77204-5641, USA

Pages 185-198 | Received 22 Jul 1996, Published online: 19 Aug 2006

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https://doi.org/10.1080/10420159708211569

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E. Holmström, A. Kuronen & K. Nordlund. (2008) Threshold defect production in silicon determined by density functional theory molecular dynamics simulations. Physical Review B 78:4.
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M. Kaukonen & R. M. Nieminen. (2000) Atomic-scale modeling of the ion-beam-induced growth of amorphous carbon. Physical Review B 61:4, pages 2806-2811.
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S. M. Lee, C. J. Fell, D. Marton & J. W. Rabalais. (1998) Synergetic effects in annealing and low energy ion bombardment of Si(100) surfaces. Journal of Applied Physics 83:10, pages 5217-5223.
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K. Nordlund, M. Ghaly, R. S. Averback, M. Caturla, T. Diaz de la Rubia & J. Tarus. (1998) Defect production in collision cascades in elemental semiconductors and fcc metals. Physical Review B 57:13, pages 7556-7570.
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Elementary processes during low-energy self-bombardment of Si(100) 2 × 2 a molecular dynamics study

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Elementary processes during low-energy self-bombardment of Si(100) 2 × 2 a molecular dynamics study

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