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Integrated Ferroelectrics
An International Journal
Volume 52, 2003 - Issue 1
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Original Articles

Fabrication of Ion-Cosubstituted Bismuth Titanate Thin Films by Chemical Solution Deposition Method

Hiroshi Uchida Department of Chemistry, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
,
Isao Okada Department of Chemistry, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
,
Hirofumi Matsuda Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568, Japan
,
Takashi Iijima Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568, Japan
,
Takayuki Watanabe Department of Innovative Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
&
Hiroshi Funakubo Department of Innovative Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Pages 41-54 | Published online: 07 Jul 2010

Citations (11)

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MINGHUA TANG, YICHUN ZHOU, XUEJUN ZHENG, ZHI YE, CHUANPIN CHENG, ZENSHUN HU & J. HE. (2007) ELECTRICAL PROPERTIES OF METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR CAPACITORS USING Pt/(Bi3.15Nd0.85)(Ti3− V )O12/ Y2O3/Si STRUCTURE. Integrated Ferroelectrics 94:1, pages 105-114.
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Articles from other publishers (10)

Feng Yang & Ming-hua Tang. (2011) Electrical properties of (Bi<inf>4.0&#x2212;x</inf>, Nd<inf>x</inf>)(Ti<inf>2.95</inf>V<inf>0.05</inf>)O<inf>12</inf> thin films with different Nd-content. Electrical properties of (Bi<inf>4.0&#x2212;x</inf>, Nd<inf>x</inf>)(Ti<inf>2.95</inf>V<inf>0.05</inf>)O<inf>12</inf> thin films with different Nd-content.
C. P. CHENG, B. JIANG, M. H. TANG, G. Y. WANG, S. B. YANG & H. Y. XU. (2012) POLARIZATION FATIGUE BEHAVIORS IN Bi 3.5 Nd 0.5 Ti 3 O 12 FERROELECTRIC THIN FILMS . Surface Review and Letters 18:05, pages 203-208.
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Fen Liu, Ying Ma, Feng Yang & Yichun Zhou. (2010) Schottky barrier height and conduction mechanisms in ferroelectric bismuth titanate. Applied Physics Letters 96:5.
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Hongchu Du, Lijun Tang & Stefan Kaskel. (2009) Preparation, Microstructure, and Ferroelectric Properties of Bi 3.25 La 0.75 Ti 3− x M x O 12 (M = Mo, W, Nb, V) Ceramics . The Journal of Physical Chemistry C 113:4, pages 1329-1339.
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J.X. Tang, M.H. Tang, J. Zhang, F. Yang, W.F. Zhao, H.Y. Xu, Z.H. Sun & Y.C. Zhou. (2008) V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films. Materials Letters 62:17-18, pages 3189-3191.
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S. K. Singh & H. Ishiwara. (2007) Site engineering in chemical-solution-deposited Bi3.25La0.75Ti3O12 thin films using Ce, Zr, Mn and Si atoms. Journal of Sol-Gel Science and Technology 42:3, pages 231-238.
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Z. Ye, M. H. Tang, Y. C. Zhou, X. J. Zheng, C. P. Cheng, Z. S. Hu & H. P. Hu. (2007) Electrical properties of V-doped Bi3.15Nd0.85Ti3O12 thin films with different contents. Applied Physics Letters 90:8.
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Tai Suk Kim, Ki Woong Kim, Min Ku Jeon, Chang Hwa Jung & Seong Ihl Woo. (2007) Effect of vanadium content on remanent polarization in bismuth titanate thin films prepared by liquid source misted chemical deposition. Applied Physics Letters 90:4.
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S.K. Singh & H. Ishiwara. (2006) Ferroelectric properties enhancement in niobium-substituted Bi3.25La0.75Ti3O12 thin films prepared by chemical solution route. Thin Solid Films 497:1-2, pages 90-95.
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. (2005) Electrical Properties of Sol-Gel Derived Ferroelectric Bi 3.35 Sm 0.65 Ti 3 O 12 Thin Films . Journal of the Korean Ceramic Society 42:3, pages 150-154.
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