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Integrated Ferroelectrics
An International Journal
Volume 65, 2004 - Issue 1
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Original Articles

The Effect of Substrate Materials on Orientation Degree of Lanthanum-Substituted Bismuth Titanate Thin Films

Dan Xie Institute of Microelectronics, Tsinghua University, Beijing, People's Republic of China, 100084
,
Tianling Ren Institute of Microelectronics, Tsinghua University, Beijing, People's Republic of China, 100084
&
Litian Liu Institute of Microelectronics, Tsinghua University, Beijing, People's Republic of China, 100084
Pages 3-11 | Received 01 Apr 2004, Published online: 11 Aug 2010

Citations (5)

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Read on this site (1)

Yongyuan Zang, Dan Xie, Yehui Xiao, Yong Ruan, Tianling Ren & Litian Liu. (2008) MICROSTRUCTURE AND DIELECTRIC PROPERTIES OF ND-DOPED BISMUTH TITANATE. Integrated Ferroelectrics 98:1, pages 97-104.
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Articles from other publishers (4)

Longdong Liu, Ruzhong Zuo & Qi Liang. (2013) Effect of PbTiO3 seed layer on the orientation behavior and electrical properties of Bi(Mg1/2Ti1/2)O3–PbTiO3 ferroelectric thin films. Ceramics International 39:4, pages 3865-3871.
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Yongyuan Zang, Dan Xie, Yu Chen, Mohan Li, Chen Chen, Tianling Ren & David Plant. (2011) Temperature dependence of optical and structural properties of ferroelectric B3.15Nd0.85Ti3O12 thin film derived by sol–gel process. Journal of Sol-Gel Science and Technology 61:1, pages 236-242.
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Dan Xie, Tianling Ren & Litian Liu. (2007) M/Bi3.4La0.6Ti3O12/I/Si capacitors for the application in FEDRAM. M/Bi3.4La0.6Ti3O12/I/Si capacitors for the application in FEDRAM.
Dan Xie, Zhigang Zhang, Tianling Ren & Litian Liu. (2006) The influence of film thickness and process temperature on c-axis orientation of Bi3TiTaO9 thin films. Journal of Sol-Gel Science and Technology 42:3, pages 271-276.
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