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Integrated Ferroelectrics
An International Journal
Volume 68, 2004 - Issue 1
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Original Articles

Comparison of the Ferroelectricity for 70–80 nm Thick Pb(Zr,Ti)O3 Films Deposited on (111)Ir Bottom Electrodes at Different Temperatures by MOCVD

A. NAGAI Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Japan, 226-8502
,
H. MORIOKA Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Japan, 226-8502
,
G. ASANO Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Japan, 226-8502
,
A. SAIKI Department of Material Systems Engineering and Life Science, Toyama University, 3190 Gofuku, Toyama, Japan, 930-8555
&
H. FUNAKUBO Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Japan, 226-8502
Pages 147-154 | Received 01 Apr 2004, Accepted 01 May 2004, Published online: 12 Aug 2010

Citations (3)

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Read on this site (1)

DAN XIE, RUI LI, XUEGUANG HAN, YONG RUAN, TIAN LING REN & LI TIAN LIU. (2008) FABRICATION AND PROPERTIES OF METAL-PZT-METAL CAPACITORS BY LIQUID DELIVERY MOCVD. Integrated Ferroelectrics 100:1, pages 114-122.
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Articles from other publishers (2)

Dan Xie, Yong Ruan, Rui Li, Mingming Zhang, Tianling Ren & Litian Liu. (2009) Comparison of PbZr1−xTixO3 thin films deposited on different substrates by liquid delivery metal organic chemical vapor deposition. Journal of Applied Physics 105:6.
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Hiroshi Funakubo, Atsushi Nagai, Gouji Asano, June-Mo Koo, Sang-Min Shin & Youngsoo Park. (2007) Effect of source materials on film thickness and compositional uniformity of MOCVD-P(Zr,Ti)O3 films. Surface and Coatings Technology 201:22-23, pages 9279-9284.
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