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Integrated Ferroelectrics
An International Journal
Volume 85, 2006 - Issue 1
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SECTION C: FeRAM MATERIALS: MATERIALS CHARACTERIZATION

IMPRINT AND FATIGUE PROPERTIES OF Pt/Pb(Zr0.4Ti0.6)O3/Pt CAPACITOR

ZE JIA Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
,
TIAN-ZHI LIU Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
,
HONG HU Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
,
TIAN-LING REN Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
,
ZHI-GANG ZHANG Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
,
DAN XIE Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
&
LI-TIAN LIU Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
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Pages 67-75 | Received 31 May 2006, Published online: 14 Feb 2007

Citations (3)

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Read on this site (1)

Ze Jia, Xiao Wu, Mingming Zhang & Juin J. Liou. (2016) Study on leakage current properties of BiFeO3 thin films with Pb(Zr,Ti)O3 buffer layer. Ferroelectrics 504:1, pages 172-179.
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Articles from other publishers (2)

Ze Jia, Xiao Wu, Mingming Zhang, Jianlong Xu, Naiwen Zhang & Juin J. Liou. (2015) Study on polarization characteristics of BiFeO 3 thin films prepared by sol-gel spin-coating technology . The European Physical Journal Applied Physics 71:1, pages 10301.
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Ze Jia, Jizhi Liu, Zhiwei Liu, Juin J. Liou, Haiyang Liu, Wei Yang & Junfeng Zhao. (2014) A reliability-boosted ferroelectric random access memory with random-dynamic reference cells. A reliability-boosted ferroelectric random access memory with random-dynamic reference cells.

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