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Integrated Ferroelectrics
An International Journal
Volume 125, 2011 - Issue 1
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Original Articles

Strain Relaxation and Dislocation Evolution in Epitaxial Perovskite Oxide Thin Films

H. Z. Zeng State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, P. R. China
,
Y. Lin State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, Sichuan, 610054, P. R. China
&
C. L. Chen Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas, 78249, USA; Department of Physics and The Texas Center for Superconductivity, University of Houston, Houston, Texas, 77204, USA
Pages 73-80 | Received 30 Jun 2010, Accepted 29 Dec 2010, Published online: 27 Jun 2011

Citations (2)

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Read on this site (1)

Y.X. Zhao, Q.H. Fang & Y.W. Liu. (2012) Edge misfit dislocation formation at the interface of a nanopore and infinite substrate with surface/interface effects. Philosophical Magazine 92:34, pages 4230-4249.
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Articles from other publishers (1)

Yuanyuan Zhu, Aiping Chen, Honghui Zhou, Wenrui Zhang, Jagdish Narayan, Judith L. MacManus-Driscoll, Quanxi Jia & Haiyan Wang. (2013) Research Updates: Epitaxial strain relaxation and associated interfacial reconstructions: The driving force for creating new structures with integrated functionality. APL Materials 1:5.
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