A Mathematical Model for the Common-Drain Amplifier Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

Mitchell Hunt The University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USA

Rana Sayyah The University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USA

Todd C. Macleod National Aeronautics and Space Administration, Marshall Space Flight Center, Huntsville, Alabama, 35812, USA

Fat D. Ho The University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USA

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Mitchell R. Hunt, Rana Sayyah, Cody Mitchell, Crystal L. McCartney, Todd C. Macleod & Fat D. Ho. (2014) Mathematical Models of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor. Integrated Ferroelectrics 157:1, pages 81-88.
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A Mathematical Model for the Common-Drain Amplifier Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

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A Mathematical Model for the Common-Drain Amplifier Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

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